Abstract:A universal fabrication strategy based on the ultrathin encapsulation‐assisted photolithography and etching is proposed, which yields a large‐scale perovskite photodetectors array (48 × 48) with a high resolution of 317 ppi. The device exhibits exceptional sensitivity to weak light sensing with high responsivity and excellent stability. Furthermore, it can capture the clear images under different light intensities and imaging masks. Metal halide perovskite photodetector arrays have demonstrated great potential applications in the field of integrated systems, optical communications, and health monitoring. However, the fabrication of large‐scale and high‐resolution device is still challenging due to their incompatibility with the polar solvents. Here, a universal fabrication strategy that utilizes ultrathin encapsulation‐assisted photolithography and etching to create high‐resolution photodetectors array with vertical crossbar structure is reported. This approach yields a 48 × 48 photodetector array with a resolution of 317 ppi. The device shows good imaging capability with a high on/off ratio of 3.3 × 105 and long‐term working stability over 12 h. Furthermore, this strategy can be applied to five different material systems, and is fully compatible with the existing photolithography and etching techniques, which are expected to have potential applications in the other high‐density and solvent‐sensitive devices array, including perovskite‐ or organic semiconductor‐based memristor, light emitting diode displays, and transistors.

Design and fabrication of large Ultra-thin PIN detector with membrane stress deviation

Fabrication and characterization of ultra-thin PIN detector

Fabrication and Characterization of Thin Silicon PIN Detectors

Fabrication and Characterization of Two-Dimensional Pin-Cushion Position Sensitive Detectors

Fabrication of Thin Silicon PIN Detector Based on Wafer Bonding Technology

Fabrication Of Ultra-Thin Silicon Pin Detector

Design Realization and Characterization of A Position Sensitive Detector for Fast Optical Measurement

A research on thick PIN detector with high breakdown voltage

Research on the structure of ultrathin Si PIN detector

Development of Large Area Silicon Semiconductor Detectors for Use in the Current Mode

Fabrication of Si Radiation Detector with Plane Technology

Investigation of the Thickness Non-Uniformity of the Very Thin Silicon-Strip Detectors

Fabrication of Integrated Silicon PIN Detector Based on Al-Sn-Al Bonding for E-E Telescope Application

Test Analysis of Ion-Implanted PIN Radiation Detectors

Ultrathin Silicon Nanomembrane in a Tubular Geometry for Enhanced Photodetection

Characterization of SOI pixel sensor using pinned depleted diode structure with AC-coupling on the diode

Silicon-Based Photodetector Array

Over 98% Linearity 4H-Sic Ultraviolet Position Sensitive Detector

A Universal Fabrication Strategy for High‐Resolution Perovskite‐Based Photodetector Arrays

Application of SCF-LTDP technology for a-Si:H film defective passivation in X-ray PIN-based photosensor

InGaAs/Si PIN photodetector with low interfacial recombination rates realized by wafer bonding with a polycrystalline Si interlayer