Abstract:Silicon-based fast time detectors have been widely used in high energy physics, nuclear physics, space exploration and other fields in recent years. However, silicon detectors often require complex low-temperature systems when operating in irradiation environment, and their detection performance decrease with the increase of irradiation dose. Compared with silicon, silicon carbide (SiC) has a wider bandgap, higher atomic displacement energy, saturated electron drift velocity and thermal conductivity. Simultaneously, the low gain avalanche detector avoids crosstalk and high noise from high multiplication due to its moderate gain, and thus can maintain a high detector signal without increasing noise. Thus, the 4H-SiC particle detector, especially the low gain avalanche detector has the potential to detect the minimal ionized particles (MIPs) under extreme irradiation and high temperature environments. In this work, the emphasis was placed on the design of a 4H-SiC Low Gain Avalanche Detector (LGAD), especially the epitaxial structure and technical process which played the main roles. In addition, a simulation tool--RASER(RAdiation SEmiconductoR) was developed to simulate the performances including the electrical properties and time resolution of the 4H-SiC LGAD we proposed. The working voltage and gain effectiveness of the LGAD were verified by the simulation of electrical performances. The time resolution of the LGAD is (35.0 $\pm$ 0.2) ps under the electrical field of -800 V, which is better than that of the 4H-SiC PIN detector.

Fabrication of Si Radiation Detector with Plane Technology

Fabrication and Characterization of Thin Silicon PIN Detectors

Design Realization and Characterization of A Position Sensitive Detector for Fast Optical Measurement

Development of Ion-Implanted Si-PIN Semiconductor Radiation Detector

Fabrication of Thin Silicon PIN Detector Based on Wafer Bonding Technology

Fabrication and characterization of ultra-thin PIN detector

Fabrication Of Ultra-Thin Silicon Pin Detector

Fabrication technology and characterization of PTCDA/p-Si photo-electronic detector

Development of P-I-n Radiation Detectors Based on Semi-Insulating 4H-Sic Substrate Via Dual-Face Ion Implantation

Silicon-Based Photodetector Array

The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm²

Fabrication of integrated GeSi/Si superlattice PIN photodetector with waveguide

Design and simulation of a novel 4H-SiC LGAD timing device

Research on the structure of ultrathin Si PIN detector

Hybrid Integrated Velocity Matched Travelling-Wave InP/InGaAs Photodetectors with Silicon Nitride Waveguides

Analysis dark-current in GeSi/Si superlattice PIN photodetector

Fabrication of 1.5mm Thickness Silicon Pin Fast Neutron Detector with Guard Ring Structure

Near-Infrared Absorptance Enhancement and Device Application of Nanostructured Black Silicon Fabricated by Metal-Assist Chemical Etching

High Resolution 4H-Sic P-I-n Radiation Detectors with Low-Voltage Operation

Time Resolution of the 4H-SiC PIN Detector

Fabrication of Planar InGaAs/InP PIN Photodiodes Using Laser Assisted Microprocessing