Abstract:In the past decade, photo-detectors have been demonstrated to have very important applications in image sensing, optical communication, fire detection, environmental monitoring, space exploration, safety detection, and many other scientific research and industrial technology fields and are regarded as the key components of wearable devices. Compared to traditional fabrication approaches, pulsed-laser deposition (PLD)-grown materials for photo-detectors offer several merits. First, PLD is a clean physical vapor deposition approach. A stoichiometric amount of atoms can be transferred from the target to the substrate, avoiding complicated and potentially dangerous chemical reactions. Furthermore, the PLD process is carried out in a high-vacuum environment. Therefore, almost no contaminants, such as catalysts, precursors, surfactants and by-products, will be introduced. Also, the thickness of the films can be controlled by simply manipulating the energy and pulse number of the pulsed laser. Furthermore, the fabrication temperature is relatively low, which is available to deposit materials on various substrates, even flexible ones. Most importantly, PLD is a deposition technology with large area coverage, which can produce centimeter-scale thin films, the planar geometry of which has significant potential for compact device integration with modern semiconductor techniques. Consequently, this review introduces the recent advances on the materials, fabrication, and application of pulsed-laser deposition for a variety of high-performance photo-detectors from an overall perspective. Moreover, the challenges and future development trends are discussed.

Fabrication technology and characterization of PTCDA/p-Si photo-electronic detector

Design Realization and Characterization of A Position Sensitive Detector for Fast Optical Measurement

Fabrication of Si Radiation Detector with Plane Technology

Fabrication and electrical characterization of Al/DNA-CTMA/p-type a-Si:H photodiode based on DNA-CTMA biomaterial

Enhanced Photodetection Performance Of Schottky Pt/Sns2/Al And Au/Sns2/Al Photodetectors

The Fabrication And Characterization Of Flexible Single-Crystalline Silicon And Germanium P-Intrinsic-N Photodetectors On Plastic Substrates

PbTe Thin Film Mid-Infrared Photoconductive Detectors Grown by Molecular Beam Epitaxy

Enhanced photodetection performance of Schottky Pt/SnS 2 /Al and Au/SnS 2 /Al photodetectors

Colloidal PbS Quantum Dot Photodiode Imager with Suppressed Dark Current

Electrode Engineering of Colloidal Quantum Dot Photodetectors Using a Self-Assembled Island-like LiF Interfacial Layer

High-Performance Ultrabroadband Photodetector Based on Photothermoelectric Effect.

Performance Analysis of a 4H-Sic N-P-n Phototransistor with Floating Base for Ultraviolet Light Detection

Nanoscale imaging of the photoresponse in PN junctions of InGaAs infrared detector

The Fabrication and Characterization of Ni/4H-SiC Schottky Diode Radiation Detectors with a Sensitive Area of up to 4 cm²

The Influence of Surface Treatment on the Performance of Photoconductive Detectors Based on Silicon Wafer

Enhanced Photo-Thermoelectric Detection in Black Silicon with Chimney-Like Texture

High-Performance 4H-Sic P-I-n Ultraviolet Photodiode with P Layer Formed by Al Implantation

Surface and Interface Characteristics of ITO/PTCDA/p-Si Thin Film Devices

Improvement of surface leakage current of 2.6 µm InGaAs photodetectors by using inductive coupled plasma chemical vapor deposition technology

Fabrication and Characterization of Thin Silicon PIN Detectors

Recent progress in high-performance photo-detectors enabled by the pulsed laser deposition technology