Abstract:A stable pH‐universal photoelectrochemical photodetector is designed based on a whole single‐crystal integrated self‐supporting 4H‐SiC nanopore array photoelectrode. The device delivers excellent photodetection performance with high responsivity, detectivity, external quantum efficiency, and rapid rise/decay times of 218.77 mA W−1, 6.64 × 1013 Jones, 72.47%, and 17/48 ms, respectively, under 375 nm light illumination. Emerging photoelectrochemical (PEC) photodetectors (PDs) have notable advantages over conventional PDs and have attracted extensive attention. However, harsh liquid environments, such as those with high corrosivity and attenuation, substantially restrict their widespread application. Moreover, most PEC PDs are constructed by assembling numerous nanostructures on current collector substrates, which inevitably contain abundant interfaces and defects, thus greatly weakening the properties of PDs. To address these challenges, a high‐performance pH‐universal PEC ultraviolet (UV) PD based on a whole single‐crystal integrated self‐supporting 4H‐SiC nanopore array photoelectrode is constructed, which is fabricated using a two‐step anodic oxidation approach. The PD exhibits excellent photodetection behavior, with high responsivity (218.77 mA W−1), detectivity (6.64 × 1013 Jones), external quantum efficiency (72.47%), and rapid rise/decay times (17/48 ms) under 375 nm light illumination with a low intensity of 0.15 mW cm−2 and a bias voltage of 0.6 V, which is fall in the state‐of‐the‐art of the wide‐bandgap semiconductor‐based PDs reported thus far. Furthermore, the SiC PEC PD exhibits excellent photoresponse and long‐term operational stability in pH‐universal liquid environments. The improved photodetection performance of the SiC PEC PD is primarily attributed to the synergistic effect of the nanopore array structure, integrated self‐supporting configuration, and single‐crystal structure of the whole photoelectrode.

Fabrication and electrical characterization of Al/DNA-CTMA/p-type a-Si:H photodiode based on DNA-CTMA biomaterial

Modulated Light-Activated Electrochemistry at Silicon Functionalized with Metal-Organic Frameworks Towards Addressable DNA Chips.

Design Realization and Characterization of A Position Sensitive Detector for Fast Optical Measurement

High-Performance 4H-Sic P-I-n Ultraviolet Photodiode with P Layer Formed by Al Implantation

Fabrication technology and characterization of PTCDA/p-Si photo-electronic detector

Strain-Engineering-Driven Photomechanical–Photoelectric Coupled Flexible Photodetector Based on Hexagonal Silicon Nanowire Films

Photodetector fabrication based on heterojunction of CuO/SnO2/Si nanostructures

High‐Performance Broadband Photodetector with Lateral Contact of n+‐Si Wafer by Two Asymmetric Work‐Function Electrodes

High-performance 4H-SiC EUV Photodiode with Lateral p-n Junction Fabricated by Selective-area Ion Implantation

High‐Sensitivity Photoelectrochemical Ultraviolet Photodetector with Stable pH‐Universal Adaptability Based on Whole Single‐Crystal Integrated Self‐Supporting 4H‐SiC Nanoarrays

Anisotropic wet etching of a novel micro-texture structure for an Al/n-Si/Al metal–semiconductor–metal photodetector fabrication

Optoelectric response of Schottky photodiode with a PVP: ZnTiO 3 nanocomposite as an interfacial layer

Pt/AlGaN Nanoarchitecture: Toward High Responsivity, Self-Powered Ultraviolet-Sensitive Photodetection

Si-CMOS-compatible 2D PtSe2-based Self-Driven Photodetector with Ultrahigh Responsivity and Specific Detectivity

Application a-Si:H and Its Alloys for Photoreceptor Devices

Wafer-Scale Growth of Sb2Te3 Films via Low-Temperature ALD for Self-Powered Photodetector

Highly Performing MSM Type Ag/n-titanium Dioxide Nanotubes/p-Si Heterojunction Based Ultraviolet-A Photodetectors

Design and Fabrication of AlGaN-Based Resonant-Cavity-Enhanced P-I-n UV PDs

Investigation of electrical, dielectric and interface state densities of al/ p -Si structures with PTCDA interlayer under different light intensities

Visible-Blind Photodetector Based on P-I-n Junction 4H-Sic Vertical Nanocone Array

Flexible Si/PEDOT:PSS heterojunction photodetectors with excellent interface contact quality for NIR detection