Abstract:p-Type hydrogenated silicon carbide (p-SiC:H) films were prepared using plasma-enhanced chemical vapor deposition by systematically incorporating carbon into nanocrystalline silicon networks. The carbon content of the films was varied by adjusting the methane/silane (CH4/SiH4; R-c) ratio. The chemical bonding, micro structural, and electro-optical properties of the films were investigated in detail. With increasing R-c,R-, the silicon carbon bond density in the films increased gradually and the overall microstructure became amorphous. Through sophisticated control of the carbon content of the films during high hydrogen dilution deposition, p-type hydrogenated nanocrystalline SiC:H (p-nc-SiC:H) films with nanometer-scale Si crystallites embedded in an amorphous SiC:H matrix were obtained. The p-nc-SiC:H films had wide bandgaps larger than 2 eV and reduced parasitic light absorption at wavelengths below 550 nm. When using wide-bandgap p-nc-SiC:H films with superior electro-optical properties as window layers in n-i-p flexible and p-i-n semi-transparent nc-Si:H solar cells, in place of conventional p-nc-Si:H layers with narrow bandgaps, enhanced cell performance was achieved because of both high open circuit voltage (V-oc) and high quantum efficiency values at short wavelengths of 350-550 nm. The conversion efficiencies of the flexible nc-Si:H solar cells increased from 6.37% (V-oc = 0.41 V, J(sc) = 22.81 mA/cm(2), and FF = 68.10%, where Jsc is the short-circuit current density and FF is the fill factor, respectively) to 7.89% (Voc = 0.51 V, J(sc) = 24.04 mA/cm(2), and FF = 64.37%). A further increase in the conversion efficiency to 9.18% was obtained by inserting a very thin, highly-doped p-nc-SiC:H buffer layer between a low-doped p-nc-SiC:H window layer and an indium tin oxide front contact. A significant increase in the conversion efficiency from 3.66% (V-oc = 0.42 V, J(sc) = 14.83 mA/cm(2), and FF = 58.69%) to 4.33% (V-oc = 0.45 V, J(sc) = 17.74 mA/cm(2), and FF = 54.18%) was achieved with the semi-transparent nc-Si:H solar cell, with an average optical transmittance of 17.29% in the visible wavelength region of 500-800 nm.

Application a-Si:H and Its Alloys for Photoreceptor Devices

Deposition Of A-Si : H Photoconductor Layer For Lclv By Pecvd

Highly Conductive p-Type Silicon Carbon Alloys Deposited by Hot-Wire Chemical Vapor Deposition

MoOx Hole Collection Layer for A-Si: H Based Photovoltaic Cells

Ultra-thin LiF Layer As the Electron Collector for A-Si:H Based Photovoltaic Cell

Influence of High Dose As Ion Implantation on Electrical Properties of High Resistivity Silicon

Study on P-a-Si:H properties of N-type heterogeneous junction solar cells manufactured by large-area parallel plate PECVD machine

Thin heterojunction a-Si:H photovoltaic cell design with no doped a-Si:H layers

4H–SiC photoconductive switching devices for use in high-power applications

Study of A-Si:H/μc-si:h Heterojunction As Photosensor for Large Screen Projection Display

Wide-bandgap Nanocrystalline Silicon-Carbon Alloys for Photovoltaic Applications

High Efficiency N-Zno/p-sic Heterostructure Photodiodes Grown by Plasma-Assisted Molecular-Beam Epitaxy

Enhanced Photovoltaic Property by Forming P-I-n Structures Containing Si Quantum Dots/sic Multilayers.

Analysis of the physical and photoelectrochemical properties of c-Si(p)/a-SiC:H(p) photocathodes for solar water splitting

Epitaxial P-Si/cspbbr3 Heterostructure Photodetector with Enhanced Green Responsivity

Surface Engineering of Nanoporous Silicon Photocathodes for Enhanced Photoelectrochemical Hydrogen Production

Influence of the substrate conductivity type on the electroluminescence properties of PP+IN and PIN+N diodes based on amorphous silicon carbide (a-Si1-xCx:H) / crystalline silicon (c-Si) heterostructures

Enhanced Selective Contact Behavior in a‐Si:H/oxide Transparent PV Devices via Dipole Layer Integration

Wide Bandgap P-Type Nanocrystalline Silicon Oxide As Window Layer for High Performance Thin-Film Silicon Multi-Junction Solar Cells

Development of Heterojunction c-Si/a-Si1-xCx:H PIN Light-Emitting Diodes

High-Performance CsPbBr3-Silicon Heterojunction Photodetectors Fabricated by Chemical Vapor Deposition