Enhanced Selective Contact Behavior in a‐Si:H/oxide Transparent PV Devices via Dipole Layer Integration

Alex J. Lopez-Garcia,Gustavo Alvarez-Suarez,Eloi Ros,Pablo Ortega,Cristobal Voz,Joaquim Puigdollers,Alejandro Pérez Rodríguez
DOI: https://doi.org/10.1002/solr.202400276
IF: 9.1726
2024-06-16
Solar RRL
Abstract:Transparent Photovoltaic (TPV) devices have the potential to revolutionize photovoltaic technology by enabling on‐site generation while minimizing visual impact. However, a major challenge in the development of TPV, as well as for many PV technologies, has been the open‐circuit voltage (Voc) deficit, which limits their efficiency. In this work, we report the development of wide‐bandgap inorganic‐based TPV devices with a focus on low‐cost, earth‐abundant, stable, and non‐toxic materials. The device structure consists of an ultrathin hydrogenated amorphous Silicon (a‐Si:H) absorber and metal‐oxide layers as selective contacts. We present a novel approach to significantly improve device performance, especially in Voc, by introducing molecular dipoles in the device electron‐transport‐layer (ETL). By incorporating polyethyleneimine (PEI) or poly(amidoamine) (PAMAM) G1 and G2 dipoles, we significantly increased Voc (from 410 mV up to 638 mV) without sacrificing the Average Photopic Transmittance (APT) of the device, leading to a record efficiency for this particular approach in TPV. Measurements confirm excellent long‐term stability. This approach can potentially allow tuning the work function of the selective contacts enabling the use of low‐cost, earth abundant materials that are not optimized for a particular absorber. Furthermore, this solution circumvents the issue of low Voc by a simple interface treatment. This article is protected by copyright. All rights reserved.
energy & fuels,materials science, multidisciplinary
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