Abstract:Silicon quantum dot (Si QD) tandem solar cell is a promising cell structure for realising high efficiency at low cost. The tandem solar cell effectively harnesses energy from the solar spectrum by stacking two or more cells together in the order of descending band gaps. Due to quantum confinement, the band gap of silicon based nanostructures such as Si QDs can be tailored by varying the size of the QDs. Solar cells and light emitting diodes based on Si QDs have been realised in experiments. However, current crowding due to high lateral resistance remains to be a major problem for Si QD devices grown on quartz substrates. Annealed silicon rich carbide (SRC), owing to its electrical conductivity, thermal stability and energy band gap compatible with Si QD cell fabrication, has the potential to overcome this problem. Further, this quasi-transparent thin-film can be used as either substrate or superstrate of a Si QD solar cell and therefore provides flexibility in cell structure design. Here, we investigate the physical, optical and electrical properties of the new material as functions of silicon concentration and doping conditions via a number of characterisation techniques including X-ray diffraction, Raman spectroscopy, ultraviolet-visible-infrared spectroscopy and four-point probe measurement. Some discoveries, including the lower crystallisation temperature of SiC within SRC, are also discussed. The research may provide some insight into the optimisation of annealed SRC as the new conductive material for Si QD solar cell and may boost the final arrival of all-silicon tandem solar cell.

Enhanced Photovoltaic Property by Forming P-I-n Structures Containing Si Quantum Dots/sic Multilayers.

Improved Photovoltaic Properties of Si Quantum Dots/Sic Multilayers-Based Heterojunction Solar Cells by Reducing Tunneling Barrier Thickness

Improved Nanocrystal Formation, Quantum Confinement and Carrier Transport Properties of Doped Si Quantum Dot Superlattices for Third Generation Photovoltaics

Formation and Photoluminescence of Si Quantum Dots in Sio2/Si3n4 Hybrid Matrix for All-Si Tandem Solar Cells

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells

Silicon Quantum Dot Based Solar Cells: Addressing the Issues of Doping, Voltage and Current Transport

Enhancement of electroluminescence in p–i–n structures with nano-crystalline Si/SiO<sub>2</sub> multilayers

In Situ Grown Size-Controlled Silicon Nanocrystals: A P Type Nanocrystalline-Si:H/a-sicx:h Superlattice (P-Nc-si:H/a-sicx:h) Approach

Structural and Electroluminescent Properties of Si Quantum Dots/sic Multilayers

Light Trapping and Down‐Shifting Effect of Periodically Nanopatterned Si‐Quantum‐Dot‐Based Structures for Enhanced Photovoltaic Properties

Improved Device Performance of Si-based Heterojunction Solar Cells by Using Phosphorus Doped Si Nanocrystals Embedded in SiC Host Matrix

Size-dependent Photovoltaic Properties of Solar Cells Containing Si Quantum Dots/SiC Multilayers

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Down-Shifting and Anti-Reflection Effect of CsPbBr3 Quantum Dots/Multicrystalline Silicon Hybrid Structures for Enhanced Photovoltaic Properties

Ge/Si Quantum Dots Thin Film Solar Cells

Size-controlled Nc-Si:H/a-sic:h Quantum Dots Superlattice and Its Application to Hydrogenated Amorphous Silicon Solar Cells

High Performance Nanostructured Silicon-Organic Quasi P-N Junction Solar Cells Via Low-Temperature Deposited Hole and Electron Selective Layer.

High Open-Circuit Voltage (1.04 V) N–i–p Type Thin Film Silicon Solar Cell by Two-Phase Silicon Carbide Intrinsic Material

Ordered Element Distributed C3 N Quantum Dots Manipulated Crystallization Kinetics for 2D CsPbI3 Solar Cells with Ultra-High Performance.

Enhanced Broadband Spectral Response and Energy Conversion Efficiency for Hetero-Junction Solar Cells with Graded-Sized Si Quantum Dots/sic Multilayers