Jixian Xu,Oleksandr Voznyy,Mengxia Liu,Ahmad R. Kirmani,Grant Walters,Rahim Munir,Maged Abdelsamie,Andrew H. Proppe,Amrita Sarkar,F. Pelayo García de Arquer,Mingyang Wei,Bin Sun,Min Liu,Olivier Ouellette,Rafael Quintero-Bermudez,Jie Li,James Fan,Lina Quan,Petar Todorovic,Hairen Tan,Sjoerd Hoogland,Shana O. Kelley,Morgan Stefik,Aram Amassian,Edward H. Sargent

Abstract:Colloidal quantum dots (CQDs) are promising photovoltaic (PV) materials because of their widely tunable absorption spectrum controlled by nanocrystal size1,2. Their bandgap tunability allows not only the optimization of single-junction cells, but also the fabrication of multijunction cells that complement perovskites and silicon3. Advances in surface passivation2,4–7, combined with advances in device structures8, have contributed to certified power conversion efficiencies (PCEs) that rose to 11% in 20169. Further gains in performance are available if the thickness of the devices can be increased to maximize the light harvesting at a high fill factor (FF). However, at present the active layer thickness is limited to ~300 nm by the concomitant photocarrier diffusion length. To date, CQD devices thicker than this typically exhibit decreases in short-circuit current (JSC) and open-circuit voltage (VOC), as seen in previous reports3,9–11. Here, we report a matrix engineering strategy for CQD solids that significantly enhances the photocarrier diffusion length. We find that a hybrid inorganic–amine coordinating complex enables us to generate a high-quality two-dimensionally (2D) confined inorganic matrix that programmes internanoparticle spacing at the atomic scale. This strategy enables the reduction of structural and energetic disorder in the solid and concurrent improvements in the CQD packing density and uniformity. Consequently, planar devices with a nearly doubled active layer thicknesses (~600 nm) and record values of JSC (32 mA cm−2) are fabricated. The VOC improved as the current was increased. We demonstrate CQD solar cells with a certified record efficiency of 12%.

Silicon quantum dot/crystalline silicon solar cells

Improved Nanocrystal Formation, Quantum Confinement and Carrier Transport Properties of Doped Si Quantum Dot Superlattices for Third Generation Photovoltaics

Si Solid-State Quantum Dot-Based Materials for Tandem Solar Cells.

Silicon Quantum Dot Based Solar Cells: Addressing the Issues of Doping, Voltage and Current Transport

Formation and Photoluminescence of Si Quantum Dots in Sio2/Si3n4 Hybrid Matrix for All-Si Tandem Solar Cells

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

Impacts of Post-metallisation Processes on the Electrical and Photovoltaic Properties of Si Quantum Dot Solar Cells

Fabrication and Characterisation of Silicon Quantum Dots in SiO 2 /si 3 N 4 Hybrid Matrix

Crystalline Si/Graphene Quantum Dots Heterojunction Solar Cells

Size-dependent Photovoltaic Properties of Solar Cells Containing Si Quantum Dots/SiC Multilayers

Silicon quantum dot superlattices: Modeling of energy bands, densities of states, and mobilities for silicon tandem solar cell applications

Study on silicon quantum dots sensitized solar cells

Application of Silicon Nanocrystals in Solar Cells

Crystalline Silicon Heterojunction Solar Cell with 81.6% Fill Factor, Deposited by Physical Vapour Deposition Methods Only

Silicon-nanocrystal-incorporated Ternary Hybrid Solar Cells

Enhanced Photovoltaic Property by Forming P-I-n Structures Containing Si Quantum Dots/sic Multilayers.

Inorganic Quantum Dot Materials and Their Applications in “organic” Hybrid Solar Cells

Solar Cells Sensitized with Type-Ii ZnSe-CdS Core/shell Colloidal Quantum Dots.

Silicon Nanocrystal Conjugated Polymer Hybrid Solar Cells with Improved Performance

2D matrix engineering for homogeneous quantum dot coupling in photovoltaic solids

Enhanced Broadband Spectral Response and Energy Conversion Efficiency for Hetero-Junction Solar Cells with Graded-Sized Si Quantum Dots/sic Multilayers