Abstract:Silicon quantum dot (Si QD) tandem solar cell is a promising cell structure for realising high efficiency at low cost. The tandem solar cell effectively harnesses energy from the solar spectrum by stacking two or more cells together in the order of descending band gaps. Due to quantum confinement, the band gap of silicon based nanostructures such as Si QDs can be tailored by varying the size of the QDs. Solar cells and light emitting diodes based on Si QDs have been realised in experiments. However, current crowding due to high lateral resistance remains to be a major problem for Si QD devices grown on quartz substrates. Annealed silicon rich carbide (SRC), owing to its electrical conductivity, thermal stability and energy band gap compatible with Si QD cell fabrication, has the potential to overcome this problem. Further, this quasi-transparent thin-film can be used as either substrate or superstrate of a Si QD solar cell and therefore provides flexibility in cell structure design. Here, we investigate the physical, optical and electrical properties of the new material as functions of silicon concentration and doping conditions via a number of characterisation techniques including X-ray diffraction, Raman spectroscopy, ultraviolet-visible-infrared spectroscopy and four-point probe measurement. Some discoveries, including the lower crystallisation temperature of SiC within SRC, are also discussed. The research may provide some insight into the optimisation of annealed SRC as the new conductive material for Si QD solar cell and may boost the final arrival of all-silicon tandem solar cell.

Enhanced Broadband Spectral Response and Energy Conversion Efficiency for Hetero-Junction Solar Cells with Graded-Sized Si Quantum Dots/sic Multilayers

Improved Nanocrystal Formation, Quantum Confinement and Carrier Transport Properties of Doped Si Quantum Dot Superlattices for Third Generation Photovoltaics

Silicon Quantum Dot Based Solar Cells: Addressing the Issues of Doping, Voltage and Current Transport

Si Solid-State Quantum Dot-Based Materials for Tandem Solar Cells.

Silicon Rich Carbide As A Conductive Substrate For Si Qd Solar Cells

Size-dependent Photovoltaic Properties of Solar Cells Containing Si Quantum Dots/SiC Multilayers

Formation and Photoluminescence of Si Quantum Dots in Sio2/Si3n4 Hybrid Matrix for All-Si Tandem Solar Cells

Crystalline Si/Graphene Quantum Dots Heterojunction Solar Cells

Light Harvesting and Enhanced Performance of Si Quantum Dot/Si Nanowire Heterojunction Solar Cells

Down-Shifting and Anti-Reflection Effect of CsPbBr3 Quantum Dots/Multicrystalline Silicon Hybrid Structures for Enhanced Photovoltaic Properties

Improved Photovoltaic Properties of Si Quantum Dots/Sic Multilayers-Based Heterojunction Solar Cells by Reducing Tunneling Barrier Thickness

Multi-type quantum dots photo-induced doping enhanced graphene/semiconductor solar cell

Improved Efficiency of Znse Qds-Si Hybrid Solar Cell System by Down Shifting Process

Enhanced Photovoltaic Property by Forming P-I-n Structures Containing Si Quantum Dots/sic Multilayers.

Light Trapping and Down‐Shifting Effect of Periodically Nanopatterned Si‐Quantum‐Dot‐Based Structures for Enhanced Photovoltaic Properties

Nonradiative Energy Transfer Enables a Hv < E G Response of Perovskite Quantum Dots in Si-Based Inorganic-Organic Hybrid Solar Cells

Carbon quantum dots interfacial modified graphene/silicon Schottky barrier solar cell

Nonradiative Energy Transfer Enables a hv < Eg Response of Perovskite Quantum Dots in Si-Based Inorganic-Organic Hybrid Solar Cells

Silicon quantum dot/crystalline silicon solar cells

AgIn5S8/ZnS Quantum Dots for Luminescent Down-Shifting and Antireflective Layer in Enhancing Photovoltaic Performance

Multibandgap Quantum Dot Ensembles for Solar-Matched Infrared Energy Harvesting.