AgIn5S8/ZnS Quantum Dots for Luminescent Down-Shifting and Antireflective Layer in Enhancing Photovoltaic Performance

Mengqin Kong,Andres Osvet,Anastasia Barabash,Kaicheng Zhang,Huiying Hu,Jack Elia,Christof Erban,Tadahiro Yokosawa,Erdmann Spiecker,Miroslaw Batentschuk,Christoph J Brabec
DOI: https://doi.org/10.1021/acsami.3c11140
2023-10-31
Abstract:Colloidal AgIn5S8/ZnS quantum dots (QDs) have recently emerged as a promising, efficient, nontoxic, down-shifting material in optoelectronic devices. These QDs exhibit a high photoluminescent quantum yield and offer a range of potential applications, specifically in the field of photovoltaics (PVs) for light management. In this work, we report an eco-friendly method to synthesize AgIn5S8/ZnS QDs and deposit them on commercial silicon solar cells (with an active area of 7.5 cm2), with which the short-circuit current (JSC) enhanced by 1.44% and hence the power conversion efficiency by 2.51%. The enhancements in PV performance are mainly attributable to the improved external quantum efficiency in the ultraviolet region and reduced surface reflectance in the ultraviolet and near-infrared regions. We study the effect of QD concentration on the bifunctions of downshifting and antireflection. The optimal 15 mg/mL QDs blade-coated onto the Si solar cells realize maximum current generation as the reflectance loss in the visible wavelength is compensated by the minimized reflection in the near-infrared region.
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