Ultra-thin LiF Layer As the Electron Collector for A-Si:H Based Photovoltaic Cell

Delft University of Technology,Melskens Jimmy,Smets Arno,Zeman Miro,Amaratunga Gehan
DOI: https://doi.org/10.1557/adv.2017.250
2017-01-01
MRS Advances
Abstract:An ultra-thin LiF layer in conjunction with an Al layer is employed as the electron collector for the a-Si:H based single-junction thin film photovoltaic cell. The cell has the structure of boron doped μ-SiO x (hole collector) - intrinsic a-Si:H (photoactive layer) - LiF / Al (electron collector and back electrode). The substrate used is U type Asahi glass, which is also acting as the transparent front electrode. For the cell with the 1.5 nm thick LiF layer, annealed at 120 o C, the open current voltage (V OC ) of 0.936 V, the short current density (J SC ) of 13.598 mA/cm 2 , and the fill factor (FF) of 0.690 are achieved. The J SC and V OC values are comparable to the values measured for the a-Si:H based p-i-n reference cell, but the FF value is found to be lower, which is attributed to the losses due to recombination at the intrinsic a-Si:H / LiF / Al junction. The current versus voltage measurements are carried out under the standard test conditions. The J SC values are corrected according to the external quantum efficiency measurements of the cells in the AM1.5 spectrum region between 270 nm and 800 nm.
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