Abstract:Thin-fi lm silicon solar cells, including hydrogenated amorphous silicon (a-Si:H) single-junction and amorphous/microcrystalline silicon (a-Si:H/ μ c-Si:H) tandem-junction solar cells, are promising candidates for the global terawatt-scale deployment of photovoltaics thanks to the abundance and non-toxicity of their raw materials, and mature fabrication processes. [ 1 , 2 ] Compared to their traditional wafer-based crystalline counterparts, thin-fi lm silicon technologies, with typical silicon absorber thicknesses of only a few hundred nanometers, require much less active material, which can be deposited on a variety of low-cost substrates, such as glass, stainless steel, and plastic. Thinner absorber layers not only contribute to cost reduction but are also benefi cial in terms of energy-payback time. However, as light absorption in silicon becomes small near the bandgap, advanced light-trapping schemes must be implemented to achieve high effi ciencies with such thin silicon layers. [ 3 , 4 ] According to Yablonovitch’s theory, [ 5 ] a maximum absorption enhancement of up to 4 n 2 may be reached, where n is the refractive index of the active absorber material. Experimentally, light trapping is realized by introducing scattering at interfaces between neighboring layers that have different refractive indices. In the substrate confi guration (or n-i-p confi guration, describing the deposition sequence of n-type, intrinsic, and p-type silicon layers onto the substrate), this is achieved by texturing of the back refl ector. Thermally roughened silver fi lms, [ 6–9 ] silver-covered randomly oriented SnO 2 and ZnO pyramids grown by chemical vapor deposition, [ 10–13 ] and silver-covered vertically aligned ZnO nanorods grown by hydrothermal synthesis [ 14 ] have already been successfully used to enhance light absorption in n-i-p solar cells. Naughton et al. [ 15 ] fabricated arrays of silver-covered 1.6 μ m-high tapered Si nanopillars and used those as a back refl ector for coaxial n-i-p nanopillar solar

High Efficiency Dopant Free A-Si:H Solar Cell

Flexible, Dopant Free A-Si:H Solar Cell

Thin heterojunction a-Si:H photovoltaic cell design with no doped a-Si:H layers

Cylindrical Ultra-Thin A-Si:H Photovoltaic Cell with No Doped Layers

Ultra-thin LiF Layer As the Electron Collector for A-Si:H Based Photovoltaic Cell

MoOx Hole Collection Layer for A-Si: H Based Photovoltaic Cells

Crystalline Silicon Heterojunction Solar Cell with 81.6% Fill Factor, Deposited by Physical Vapour Deposition Methods Only

HIT Solar Cell with V20x Window Layer

Hit Solar Cell With V2ox Window Layer

Investigation of low band gap silicon alloy thin film solar cell for improving short and long wavelength response

Underdense A-Si:H Film Capped by A Dense Film As the Passivation Layer of A Silicon Heterojunction Solar Cell

Progress in thin film free-standing monocrystalline silicon solar cells

Enhancing the Selectivity and Transparency of the Electron Contact in Silicon Heterojunction Solar Cells by Phosphorus Catalytic Doping

Improved Amorphous/crystalline Silicon Interface Passivation for Silicon Heterojunction Solar Cells by Hot-Wire Atomic Hydrogen During Doped A-Si:H Deposition

High-Effi ciency Amorphous Silicon Solar Cell on a Periodic

Performance Enhancement of Thin-Film Silicon Solar Cells by Development of Core Component Layers

Efficiency improvement of a-Si:H Thin-Film Solar Cells by phosphorus doping of absorption layer with a-Si:H buffer layer at p/i interface

Optimized N-Type Amorphous Silicon Window Layers Via Hydrogen Dilution For Silicon Heterojunction Solar Cells By Catalytic Chemical Vapor Deposition

Nanocrystalline‐silicon hole contact layers enabling efficiency improvement of silicon heterojunction solar cells: Impact of nanostructure evolution on solar cell performance

Reduced Toxicity and Aqueous-Based Solvent Using Phosphoric Acid as the Dopant Source for Formation Emitter Layer of Silicon Solar Cells

Highly Efficient and Highly Flexible Thin Crystalline Silicon Heterojunction Solar Cells Based on Dopant-Free Carrier-Selective Contacts Fabricated with Simple Processes