Abstract:The Z–V measurements were performed in wide-range voltage (± 6 V), and then the real/imaginary parts of ε* (ε′, ε′′), M* (M′, M′′), Z* (Z′, Z′′) , tan δ , and σ ac values of the Al/p-Si structure with pure polyvinyl alcohol (PVA) (D1), 3% (D2), and 5% (D3) graphene-doped PVA interfacial-layer were calculated at four frequencies (1, 10, 100, and 1000 kHz). When the frequency in D2 and D3 structures was increased from 1 kHz to 1 MHz, the dielectric constant value changed from 32.47 to 5.12 and from 26.26 to 1.00, respectively. They have a strong frequency dependence due to the presence of interface traps ( N it ), polarization types, and organic interlayers at low frequencies. The observed anomalous peak in the ε′ and ε′′ versus voltage curves in the depletion zone is the result of re-structure/re-ordering molecules in these traps under voltage/electric-field, and N it measured frequency ( f = 1 /T ). As a result, the ε′ and ε ′′ will be given an excess value to their real-value at lower frequencies. Because N it and dipoles do not have enough time to spin themselves in the direction of the electric field and follow the ac signal at high frequencies, they cannot contribute the true value of them. In general, series resistance ( R s ) and the interfacial layer are effective in the accumulation zone, while N it is effective in the depletion region. These findings demonstrate that pure and (Gr:PVA) polymer-films at the M/S interface can be employed successfully in place of standard oxide materials. According to the comparison of dielectric constants, electrical modulus, impedance, and ac conductivity of all three structures at 100 kHz and 1 MHz frequencies, 3% Gr doping to PVA increases interfacial characteristics.

Investigation of electrical, dielectric and interface state densities of al/ p -Si structures with PTCDA interlayer under different light intensities

Characteristics of I(A-Si-H)/N+(Mc-Si-H) Junctions and Electron-Transport in P-Doped Mc-Si-H Films

Investigation of illumination-dependent electrical and photodiode properties and conduction mechanism of the Al/p-Si contact with Schiff base compound (Pyr-Pic) interlayer

Analysis of the optical and electronic characteristics of Al/NiPc complex/p-Si diode

Investigation of diode parameters using I–V and C–V characteristics of Al/maleic anhydride (MA)/p-Si structure

Frequency and voltage-dependent dielectric spectroscopy characterization of Al/(Coumarin-PVA)/p-Si structures

The capacitance/conductance and surface state intensity characteristics of the Al/(CMAT)/p-Si structures

Investigation of dielectric and electric modulus properties of Al/p-Si structures with pure, 3%, and 5% (graphene:PVA) by impedance spectroscopy

Investigation of the frequency effect on electrical modulus and dielectric properties of Al/p-Si structure with %0.5 Bi:ZnO interfacial layer

Electrical and Dielectric Behaviors of Al/SiO2-surfactant/n-Si Schottky Structure in Wide Range of Voltage and Frequency

Illumination dependent electrical, photosensitivity and photodetectivity properties of Au/SiO 2 /n-Si structures: optoelectronic situations

Optical and dielectric behavior of Al/CrO 3 /p-Si device

Role of interfacial layer as PANI–silicene in Si-based photodiodes

Illumination intensities effect on electronic properties of Fe–Ni–Mn/p-Si Schottky diode

A comparison electrical characteristics of the Au/(pure-PVA)/n-Si and Au/(CdTe doped-PVA)/n-Si (MPS) type Schottky structures using I–V and C–V measurements

Study on the interface between the organic and inorganic semiconductors

Comparison of dielectric characteristics for metal–semiconductor structures fabricated with different interlayers thicknesses

Study of Interface State Density and Effective Oxide Charge in Post-Metallization Annealed SiO/sub 2/-Sic Structures

Dielectric characterization of BSA doped-PANI interlayered metal–semiconductor structures

Surface and Interface Characteristics of ITO/PTCDA/p-Si Thin Film Devices

Photoelectrical characterization of heavily-doped p-SiC Schottky contacts