Abstract:The Z–V measurements were performed in wide-range voltage (± 6 V), and then the real/imaginary parts of ε* (ε′, ε′′), M* (M′, M′′), Z* (Z′, Z′′) , tan δ , and σ ac values of the Al/p-Si structure with pure polyvinyl alcohol (PVA) (D1), 3% (D2), and 5% (D3) graphene-doped PVA interfacial-layer were calculated at four frequencies (1, 10, 100, and 1000 kHz). When the frequency in D2 and D3 structures was increased from 1 kHz to 1 MHz, the dielectric constant value changed from 32.47 to 5.12 and from 26.26 to 1.00, respectively. They have a strong frequency dependence due to the presence of interface traps ( N it ), polarization types, and organic interlayers at low frequencies. The observed anomalous peak in the ε′ and ε′′ versus voltage curves in the depletion zone is the result of re-structure/re-ordering molecules in these traps under voltage/electric-field, and N it measured frequency ( f = 1 /T ). As a result, the ε′ and ε ′′ will be given an excess value to their real-value at lower frequencies. Because N it and dipoles do not have enough time to spin themselves in the direction of the electric field and follow the ac signal at high frequencies, they cannot contribute the true value of them. In general, series resistance ( R s ) and the interfacial layer are effective in the accumulation zone, while N it is effective in the depletion region. These findings demonstrate that pure and (Gr:PVA) polymer-films at the M/S interface can be employed successfully in place of standard oxide materials. According to the comparison of dielectric constants, electrical modulus, impedance, and ac conductivity of all three structures at 100 kHz and 1 MHz frequencies, 3% Gr doping to PVA increases interfacial characteristics.

Frequency and voltage-dependent dielectric spectroscopy characterization of Al/(Coumarin-PVA)/p-Si structures

Investigation of the frequency effect on electrical modulus and dielectric properties of Al/p-Si structure with %0.5 Bi:ZnO interfacial layer

Investigation of dielectric and electric modulus properties of Al/p-Si structures with pure, 3%, and 5% (graphene:PVA) by impedance spectroscopy

The Frequency Dependent of Main Electrical Parameters, Conductivity and Surface States in the Al/ (%0.5 Bi:ZnO)/p-Si/Au (MIS) Structures

The capacitance/conductance and surface state intensity characteristics of the Al/(CMAT)/p-Si structures

Dielectric characterization of BSA doped-PANI interlayered metal–semiconductor structures

Investigation of electrical, dielectric and interface state densities of al/ p -Si structures with PTCDA interlayer under different light intensities

On the anomalous peak and negative capacitance in the capacitance–voltage (C–V) plots of Al/(%7 Zn-PVA)/p-Si (MPS) structure

Dielectric properties and negative-capacitance/dielectric in Au/n-Si structures with PVC and (PVC:Sm2O3) interlayer

The frequency dependent complex dielectric and electric modulus properties of Au/P3HT/n-Si (MPS) Schottky barrier diode (SBD)

High-temperature sensitivity complex dielectric/electric modulus, loss tangent, and AC conductivity in Au/(S:DLC)/p-Si (MIS) structures

Synthesis of Al/HfO2/p-Si Schottky diodes and the investigation of their electrical and dielectric properties

Electrical and Dielectric Behaviors of Al/SiO2-surfactant/n-Si Schottky Structure in Wide Range of Voltage and Frequency

Frequency-dependent dielectric, electric modulus, and ac conductivity features of Au/n-Si Schottky diodes (SDs) with PVC and (PVC:Graphite/Graphene-Oxide) interlayer

Optical and dielectric behavior of Al/CrO 3 /p-Si device

Investigation of diode parameters using I–V and C–V characteristics of Al/maleic anhydride (MA)/p-Si structure

Gel-Based PVA/SiO2/p-Si Heterojunction for Electronic Device Applications

Investigation of Negative Capacitance in Admittance Analysis of Metal Semiconductors Interlayered With ZnFe2O4 Doped PVA

Frequency and temperature-dependent electrical characteristics of Ni/n-GaP/Al Schottky barrier diodes

Anomalous Capacitance-Voltage Characteristics of Al/Al-Rich Al2o3/P-Si Capacitors and Their Reconstruction

Effect of the frequency and temperature on the complex impedance spectroscopy (C–V and G–V) of p-ZnGa2Se4/n-Si nanostructure heterojunction diode