Synthesis of Al/HfO2/p-Si Schottky diodes and the investigation of their electrical and dielectric properties

Irmak Karaduman Er,Ali Orkun Çağırtekin,Murat Artuç,Selim Acar

DOI: https://doi.org/10.1007/s10854-020-04937-9

2021-01-01

Abstract:As per this work, it is aimed to explore and analyze some dielectric characteristics—such as dielectric constant (ε′$${\varepsilon }^{{\prime}}$$), dielectric loss (ε″$${\varepsilon }{{^{\prime\prime}}}$$), loss tangent (tanδ$$\mathrm{tan}\delta $$), AC conductivity (σac), and real (M′$${M}{^{\prime}}$$) and imaginary (M″$${M}{{^{\prime\prime}}}$$) parts of the electric modulus—of Al/HfO2/p-Si Schottky diode design based on temperature and frequency. The HfO2 layer was grown on p-Si substrates by atomic layer deposition method. Al metal was deposited on the upper part of this structure as Schottky contact by e-beam evaporation technique. This structure has been studied in different applied bias voltages and frequencies at temperature ranging between 300 and 360 K. The capacitance–voltage–frequency (C–V–f) and conductance-voltage-frequency (G/ω–V–f) characteristics of Al/HfO2/p-Si structure were measured in the frequency range of 10 kHz to 2 MHz by sweeping bias voltage levels (± 4 V, 50 mV steps). The experimental results and analyses confirmed that these dielectric properties of Al/HfO2/p-Si Schottky diode structure were very dependent on the frequency, bias voltage and temperature according to the presence of the interface states and distribution characteristics.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied