Effect of atomic-layer-deposited HfO2 thin-film interfacial layer on the electrical properties of Au/Ti/n-GaAs Schottky diode

D. E. Yıldız,A. Karabulut,İ. Orak,A. Turut
DOI: https://doi.org/10.1007/s10854-021-05676-1
2021-03-26
Abstract:The electrical properties of Au/Ti/HfO<sub>2</sub>/<i>n</i>-GaAs metal/insulating layer/semiconductor (MIS) contact structures were analyzed in detail by the help of capacitance–voltage (<i>C–V</i>) and conductance–voltage (<i>G–V</i>) measurements in the temperature range of 60–320 K. The HfO<sub>2</sub> thin-film layer was obtained by atomic layer deposition technique (ALD). The main electrical parameters such as ideality factor (<i>n</i>) and barrier height (Φ<sub>B0</sub>) were determined for Au/Ti/<i>n</i>-GaAs and Au/Ti/HfO<sub>2</sub>/<i>n</i>-GaAs diodes using current–voltage (<i>I–V</i>) measurement at 300 K. The values of these parameters are 1.07 and 0.77 eV for the reference (Au/Ti/<i>n</i>-GaAs) diode and 1.30 and 0.94 eV for the Au/Ti/HfO<sub>2</sub>/<i>n</i>-GaAs MIS diode, respectively. An interfacial charge density value of <span class="mathjax-tex">\({Q}_{ss}\)</span>= 4.14 × 10<sup>12</sup> Ccm<sup>−2</sup> for the MIS diode was calculated from the barrier height difference of <span class="mathjax-tex">\(\Delta\Phi =0.94-0.77=0.17 \mathrm{V}\)</span>. Depending on these results, the temperature-dependent <i>C–V</i> and <i>G–V</i> plots of the device were also investigated. The series resistance (<i>R</i><sub>s</sub>), phase angle, the interface state density (<i>D</i><sub>it</sub>), the real impedance (Z′) and imaginary impedance (Z″) were evaluated using admittance measurements. The <i>C</i> and <i>G</i> values increased, whereas (Z″) and <i>Z</i> decreased with increasing voltage at each temperature. An intersection point being independent of temperature in the <i>G–V</i> curves appeared at forward-bias side (≈1.4 V); after this intersection point of the <i>G–V</i> plot, the <i>G</i> values decreased with increasing temperature at a given voltage. The intersection points in total <span class="mathjax-tex">\(Z\)</span> versus V curves appeared at forward-bias side (≈1.7 V). The Nyquist spectra were recorded for the MIS structure showing single semicircular arcs with different diameters depending on temperature.
engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
What problem does this paper attempt to address?