Abstract:Titanium dioxide (TiO 2 ) with advantages including abundance in earth, non-toxicity, high chemical stability, surface hydrophobicity in dark, and extremely high permittivity could be highly promising for advanced electronics. However, the thermal stability and low bandgap (E g ) of TiO2 pose a big challenge for TiO 2 to be used as dielectric, which could be resolved by doping with other metal cations. In this work, we studied the impact of gallium incorporation on electrical and material characteristics of TiO 2 thin films. These TiO 2 and Ti X GaO films with thickness of 15 nm were derived by atomic layer deposition (ALD) and then annealed in O 2 ambient at 500°C, where the levels of Ga incorporation were tuned by the cycle ratio (X) of TiO 2 to that of Ga 2 O 3 during ALD growth. Both thin film transistors (TFTs) using Ti X GaO (TiO 2 ) thin films as the channel and metal-oxide semiconductor capacitors (MOSCAPs) using Ti X GaO (TiO 2 ) thin films as the dielectric were fabricated to unravel the impact of Ga incorporation on electrical properties of TiO 2 thin films. It is found that the Ga incorporation reduces the conductivity of TiO 2 thin films significantly. Pure TiO 2 thin films could be the ideal channel material for TFTs with excellent switching behaviors whereas Ga-incorporated TiO 2 thin films could be the dielectric material for MOSCAPs with good insulating properties. The leakage current and dielectric constant ( k ) value are also found to be decreased with the increased Ga content in Ti X GaO/Si MOSCAPs. Additionally, the density of interface trap (D it ) between Ti X GaO and Si were extracted by multi-frequency conductance method, where a “U-shape” trap profile with similar level of D it values can be observed for Ti X GaO MOSCAPs with varying Ga contents. Material characterizations show that the Ga incorporation destabilizes the crystallization and enlarges the bandgap (E g ) of TiO 2 while maintaining a smooth surface. Interestingly, Ga incorporation is found to decrease the overall oxygen content and introduce more oxygen-related defects in the film. As a result, the reduction of leakage current upon Ga incorporation in MOSCAPs could be explained by amorphization of the film and enlarged band offset to Si rather than oxygen defect passivation. These Ga-incorporated TiO 2 films may found promising usage in future electronic device applications such as trench capacitors in dynamic random-access memory, where the emerging high- k dielectrics with low leakage currents and high thermal stability are demanded.

Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs Interface.

Effect of Dimethylaluminumhydride-Derived Aluminum Oxynitride Passivation Layer on the Interface Chemistry and Band Alignment of HfTiO-InGaAs Gate Stacks

Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer

Effects of Ti content and wet-N2 anneal on Ge MOS capacitors with HfTiO gate dielectric

Comparison of Microstructure and Electrical Characteristics of Sputtering-Derived HfGdO/HfTiO and HfTiO/HfGdO Gate Stacks

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

Unraveling the Mechanism of Remote Scavenging Effect at the InP/Al 2 O 3 Interface Induced by Titanium Layer

Thermal annealing, interface reaction, and lanthanum-based sub-nanometer EOT gate dielectrics

Thermal Stability And Electrical Properties Of Titanium-Aluminum Oxide Ultrathin Films As High-K Gate Dielectric Materials

Exploring Heterointerface Characteristics and Charge-Storage Dynamics in ALD-Developed Ultra-Thin TiO2-In2O3/Au Heterojunctions

Oxygen Gettering Cap to Scavenge Parasitic Oxide Interlayer in TiSi Contacts

Titanium Contacts to MoS2 with Interfacial Oxide: Interface Chemistry and Thermal Transport

Scavenging effect on plasma oxidized Gd$_2$O$_3$ grown by high pressure sputtering on Si and InP substrates

Effects of Oxidation of Top and Bottom Interfaces on the Electric, Magnetic, and Spin-Orbit Torque Properties of Pt/Co/AlOx Trilayers

Contactless analysis of surface passivation and charge transfer at TiO 2 –Si interface

Effect of Er Ion Implantation on the Physical and Electrical Properties of TiN/HfO 2 Gate Stacks on Si Substrate

Gallium-incorporated TiO2 thin films by atomic layer deposition for future electronic devices

Influence of Interface Layer on Optical Properties of Sub-20 Nm-Thick TiO2films

The effect of an annealing process on atomic layer deposited TiO2thin films

Effect of Titanium Cation Doping on the Performance of In2O3 Thin Film Transistors Grown via Atomic Layer Deposition

High stability 2D electron gases formed in Si3N4/Al//KTaO3 heterostructures: synthesis and in-depth interfacial characterization