Scavenging effect on plasma oxidized Gd$_2$O$_3$ grown by high pressure sputtering on Si and InP substrates

María Ángela Pampillón,Pedro Carlos Feijoo,Enrique San Andrés,Héctor García,Helena Castán,Salvador Dueñas

DOI: https://doi.org/10.1088/0268-1242/30/3/035023

2024-01-30

Abstract:In this work, we analyze the scavenging effect of titanium gates on metal insulator semiconductor capacitors composed of gadolinium oxide as dielectric material deposited on Si and InP substrates. The Gd$_2$O$_3$ film was grown by high pressure sputtering from a metallic target followed by an in situ plasma oxidation. The thickness of the Ti film was varied between 2.5 and 17 nm and was capped with a Pt layer. For the devices grown on Si, a layer of 5 nm of Ti decreases the capacitance equivalent thickness from 2.3 to 1.9 nm without compromising the leakage current (1e-4 A cm$^{-2}$ at Vgate equal to 1 V). Thinner Ti has little impact on device performance, while 17 nm of Ti produces excessive scavenging. For InP capacitors, the scavenging effect is also observed with a decrease in the capacitance equivalent thickness from 2.5 to 1.9 nm (or an increase in the accumulation capacitance after the annealing from 1.4 to 1.7-1.8 uF cm$^{-2}$). The leakage current density remains under 1e-2 A cm$^{-2}$ at Vgate equal to 1.5 V. For these devices, a severe flatband voltage shift with frequency is observed. This can be explained by a very high interface trap state density (in the order of 1e13-1e14 eV$^{-1}$ cm$^{-2}$).

Materials Science,Applied Physics