Abstract:Discrete surface states of the P‐rich InP(100) surface are used as a sensitive probe for changes in ultrafast electron dynamics after TiO2 growth through atomic layer deposition (ALD). Time‐resolved two‐photon photoemission spectroscopy shows P‐rich InP surface states are preserved after deposition, with TiO2 providing relaxation paths at the P‐rich InP/TiO2 interface; annealing at 300 °C destroys the states. The current efficiency records for generating green hydrogen via solar water splitting are held by indium phosphide (InP)‐based photo‐absorbers, protected by TiO2 layers grown through atomic layer deposition (ALD). InP is also a leading material for photonic integrated circuits and computing, where ultrafast near‐surface behavior is key. A previous study described electronic pathways at the phosphorus‐rich (P‐rich) surface of p‐doped InP(100) using time‐resolved two‐photon photoemission (tr‐2PPE) spectroscopy. Here, the intricate electron pathways of the P‐rich InP surface modified with ALD‐deposited TiO2 are explored. Photoexcited bulk InP electrons migrate through a bulk‐to‐surface transition cluster of states and surface states and inject into the TiO2 conduction band (CB). Energy levels and occupation dynamics of CB states in P‐rich InP and TiO2 adlayers are observed, with discrete states preserved up to 10 nm TiO2 deposition. Thermalization lifetimes of excited electrons > 0.8 eV above the InP conduction band minimum (CBM) are preserved for layer thicknesses up to 2.5 nm. Annealing at 300 °C to achieve crystalline TiO2 reconstructions destroys interfacial states, affecting charge transfer. These observations enable innovative engineering of the P‐rich InP/TiO2 heterointerface, opening new possibilities for studying hot‐carrier extraction, adsorbate effects, surface plasmons, and improving photovoltaic and PEC water‐splitting devices.

Unraveling the Mechanism of Remote Scavenging Effect at the InP/Al 2 O 3 Interface Induced by Titanium Layer

Effects of Titanium Layer Oxygen Scavenging on the High-k/InGaAs Interface.

In Situ Investigations of Al/Perovskite Interfacial Structures

Probing and Manipulating the Interfacial Defects of InGaAs Dual-Layer Metal Oxides at the Atomic Scale

Unravelling Oxygen-Vacancy-induced Electron Transfer at SrTiO3-based Heterointerfaces by Transport Measurement During Growth

Electrical Performance Determination and Stress Reliability Estimation of ALD- Derived Er2O3/InP Heterointerface

Ultrafast Electron Dynamics at the P‐rich Indium Phosphide/TiO2 Interface

Optimizing Hot Electron Harvesting at Planar Metal-Semiconductor Interfaces with Titanium Oxynitride Thin Films

In situ isotope study of indium diffusion in InP/Al 2 O 3 stacks

Interfacial Study to Suppress Charge Carrier Recombination for High Efficiency Perovskite Solar Cells.

The Effect of Zirconium Doping on Solution-Processed Indium Oxide Thin Films Measured by a Novel Nondestructive Testing Method (microwave Photoconductivity Decay)

Impact of AlO x Dielectric Layer on Performance in Two-Dimensional Perovskite Photovoltaic Devices

Passivation of the Buried Interface via Preferential Crystallization of 2D Perovskite on Metal Oxide Transport Layers

In-situ investigation of interfacial effects on charge accumulation and extraction in organic solar cells based on transient photocurrent studies

Unveiling and Modulating the Interfacial Reaction at the Metal-Hole Conductor Heterojunction toward Reliable Perovskite Solar Cells

The Photoemission Study of InSb/HfO2 Stacks Upon N2 Rapid Thermal Annealing

Theoretical investigation of the structural and electronic properties of Al-decorated TiO2/perovskite interfaces

Unraveling the Modification Effect at NiOx/perovskite interfaces for Efficient and Stable Inverted Perovskite Solar Cells

Subsurface Engineering Induced Fermi Level De-pinning in Metal Oxide Semiconductors for Photoelectrochemical Water Splitting

Elucidating the Impact of Buried Interface Engineering on Perovskite Properties and Stability in Inverted Perovskite Solar Cells

Buried Interface Dielectric Layer Engineering for Highly Efficient and Stable Inverted Perovskite Solar Cells and Modules (Adv. Sci. 19/2023)