Abstract:High‐temperature promoted annealing‐induced intermixing across the Ag/In2O3:H interface is revealed by in‐situ hard X‐ray photoelectron spectroscopy in combination with ex‐situ electron microscopy. This results in an improvement of the contact resistance rather than its often‐reported deterioration. Hydrogen‐doped In2O3 (In2O3:H) is highly conductive while maintaining extraordinary transparency, thus making it a very attractive material for applications in optoelectronic devices such as (multijunction) solar cells or light‐emitting devices. However, the corresponding metal/In2O3:H contacts may exhibit undesirably high resistances, significantly deteriorating device performance. To gain insight into the underlying efficiency‐limiting mechanism, hard X‐ray photoelectron spectroscopy is employed to in‐situ monitor annealing‐induced changes in the chemical structure of the Ag/In2O3:H interface system that is further complemented by ex‐situ electron microscopy analyses and contact resistance measurements. The observed evolution of the Ag‐ and In‐related photoelectron line intensities can be explained by significant intermixing across the Ag/In2O3:H interface. The corresponding lineshape broadening of the Ag 3d spectra is attributed to the formation of Ag2O and AgO, which becomes significant at temperatures above approximately 160 °C. However, after annealing to 300 °C, instead of the formation of an insulating AgOx interfacial layer, it is found i) In to be rather homogeneously distributed in the complete Ag/In2O3:H stack, ii) Ag diffusing into the In2O3:H, and iii) an improvement of the contact resistance rather than its often‐reported deterioration.

The Photoemission Study of InSb/HfO2 Stacks Upon N2 Rapid Thermal Annealing

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Interface Optimization and Band Alignments of HfTiO/InGaAs Gate Stacks by Metalorganic Chemical Vapor Deposition of AlON Passivation Layer

Evolution of Interface Chemistry and Dielectric Properties of Hfo2/Ge Gate Stack Modulated by Gd Incorporation and Thermal Annealing

Oxynitridization Dependent Interface Control and Band Alignment of AlON/SiON/Si Gate Stacks Grown by Metalorganic Chemical Vapor Deposition

Effect of Dimethylaluminumhydride-Derived Aluminum Oxynitride Passivation Layer on the Interface Chemistry and Band Alignment of HfTiO-InGaAs Gate Stacks

Controlled Growth of Atomically Thin In2se3 Flakes by Van Der Waals Epitaxy

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

Annealing‐Induced Chemical Interaction at the Ag/In2O3:H Interface as Revealed by In Situ Photoelectron Spectroscopy

In Situ Optical Characterizations of the Annealing Effects Upon Sno2: F Films by Spectroscopic Ellipsometry

Effects of Thermal Annealing on the Charge Localization Characteristics of Hfo2/Au/Hfo2 Stack

In situ isotope study of indium diffusion in InP/Al 2 O 3 stacks

Effect of Post-Deposition Annealing on the Structural Evolution and Optoelectronic Properties of In2O3:H Thin Films.

Influence of NH3 Annealing on the Chemical States of HfO2/Al2O3 Stacks Studied by X-ray Photoelectron Spectroscopy

Reversible Band Structure Engineering in Semimetal SrIrO3 Films Using Atomic Hydrogen

Realization of Tunable-Performance in Atomic Layer Deposited Hf-doped In2O3 Thin Film Transistor Via Oxygen Vacancy Modulation.

A surface and interface study on the InSb/GaAs heterostructures

Band Offsets of Al2O3/InxGa1−xAs (x=0.53 and 0.75) and the Effects of Postdeposition Annealing

Effects of Rapid Thermal Annealing on the Morphology and Optical Property of Ultrathin Insb Film Deposited on Sio2/Si Substrate

In situ investigation of conducting interface formation in LaAlO3/SrTiO3 heterostructure

Unraveling the Mechanism of Remote Scavenging Effect at the InP/Al 2 O 3 Interface Induced by Titanium Layer