Bandgap Tailoring of Monoclinic Single‐Phase β‐(Al x Ga 1‒ x ) 2 O 3 (0 ≤ x ≤ 0.65) Thin Film by Annealing β‐Ga 2 O 3 /Al 2 O 3 Heterojunction at High Temperatures
Zhengcheng Li,Ying Wu,Boyuan Feng,Yao Li,Tong Liu,Jiagui Feng,Xiao Chen,Rong Huang,Leilei Xu,Zhiyun Li,Nan Hu,Fangsen Li,Zhitai Jia,Gang Niu,Qixin Guo,Gaohang He,Sunan Ding
DOI: https://doi.org/10.1002/pssa.202000785
2021-01-01
physica status solidi (a)
Abstract:Herein, bandgap tuning of monoclinic (−201)‐oriented β‐(Al x Ga 1− x ) 2 O 3 thin films is achieved through a β‐Ga 2 O 3 /Al 2 O 3 heterojunction by a feasible annealing process with an O 2 atmosphere. During the annealing process, Al atoms of the Al 2 O 3 substrate outdiffuse easily into the β‐Ga 2 O 3 thin film deposited by ozone‐assisted molecular beam epitaxy (OMBE). The Al compositions in the β‐(Al x Ga 1− x ) 2 O 3 samples are tuned through adjusting the annealing temperature from 800 to 1300 °C and experimentally determined from the result of X‐ray photoelectron spectroscopy (XPS) measurements combined with Vegard's law. Successive Al‐composition‐gradient β‐(Al x Ga 1− x ) 2 O 3 thin films with controlled bandgap are constructed. On these bases, β‐Ga 2 O 3 thin films are deposited on β‐(Al x Ga 1− x ) 2 O 3 (0 ≤ x ≤ 0.65) substrates through OMBE, yielding β‐Ga 2 O 3 /β‐(Al x Ga 1− x ) 2 O 3 (0 ≤ x ≤ 0.65) heterojunction structures, and the band offsets of this heterojunction are determined by XPS accordingly. This methodology to achieve high‐quality β‐(Al x Ga 1− x ) 2 O 3 thin films with adjustable Al composition and tunable band offsets of the β‐Ga 2 O 3 /β‐(Al x Ga 1− x ) 2 O 3 interface will provide guidance for potential strategies to develop and fabricate β‐(Al x Ga 1− x ) 2 O 3 ‐based deep‐UV photodetectors and power devices.