Abstract:The effects of post-deposition oxygen annealing temperature on the physical, chemical, and optical properties of gallium oxide (Ga2O3) films were systematically studied in this work. First, Ga2O3 films were deposited on Si (100) substrates by atomic layer deposition (ALD) and then annealed at 500–900 °C, respectively. Several standard surface analysis methods were used to characterize the Ga2O3 films before and after annealing. X-ray diffraction (XRD) patterns illustrated that the as-deposited amorphous film transitioned to β-phase after annealing at temperatures greater than 600 °C. Atomic force microscopy (AFM) images showed that the grain size and roughness of the films significantly increased when annealed above 700 °C. Transmission electron microscopy (TEM) tests presented that the interface microstructure was slightly affected by the annealing process. The effects of the annealing process on optical properties were performed using photoluminescence spectroscopy (PL) and spectroscopic ellipsometry (SE). Moreover, X-ray spectroscopy (XPS) was utilized to extract the oxygen vacancy (VO) concentration, bandgap, and the energy band alignment of Ga2O3. With increasing annealing temperature, it was found that the atomic ratio of O/Ga increased while VO decreased monotonically from 47.4 % to 27.0 %. Density functional theory (DFT) simulation further accounted for energy band shifts resulting from the variation of VO. This study provides a means to achieve high-quality β-Ga2O3 films, highly significant for applications of β-Ga2O3-based ultraviolet photodetectors and other relevant devices.

Effects of Postannealing Temperature on the Band Alignments and Interfacial Properties of Atomic Layer Deposited Al2o3 on Ge Substrates

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Effects of Post Annealing Treatments on the Interfacial Chemical Properties and Band Alignment of AlN/Si Structure Prepared by Atomic Layer Deposition

Effect of annealing on interfacial and band alignment characteristics of HfO 2/SiO 2 gate stacks on Ge substrates

Elemental Diffusion Study of Ge/Al2O3 and Ge/AlN/Al2O3 Interfaces Upon Post Deposition Annealing

Thermal Annealing Effects on the Structure and Electrical Properties of Al2O3 Gate Dielectrics on Fully Depleted SiGe on Insulator

On the influence of annealing on the compositional and crystallographic properties of sputtered Li-Al-O thin films

Effect of surface treatments on interfacial characteristics and band alignments of atomic-layer-deposited Al2O3 films on GaAs substrates

Influence of Post-Annealing Treatment on the Morphology of Au Films Deposited on Liquid Surfaces

Temperature-dependent oxygen annealing effect on the properties of Ga2O3 thin film deposited by atomic layer deposition

Temperature Dependent Interfacial and Electrical Characteristics During Atomic Layer Deposition and Annealing of HfO2 Films in P-Gaas Metal–oxide–semiconductor Capacitors

Band Offsets of Al2O3/InxGa1−xAs (x=0.53 and 0.75) and the Effects of Postdeposition Annealing

Band alignment and interfacial properties of atomic layer deposited (TiO 2 ) x (Al 2 O 3 ) 1− x gate dielectrics on Ge

Effect of Annealing Temperature on the Microstructure and Optical Properties of Lanthanum-Doped Hafnium Oxide

Annealing Temperature Dependence of Band Alignment of NiO/β-Ga2O3

Band Alignment Modulation of Atomic Layer Deposition-Prepared Al2O3/β-Ga2O3 Heterojunction Interface by Deposition Temperature

Deposition Temperature and Thermal Annealing Effects on the Electrical Characteristics of Atomic Layer Deposited Al2O3 Films on Silicon

Thermal Annealing Effects on a Compositionally Graded SiGe Layer Fabricated by Oxidizing a Strained SiGe Layer

The effect of post-annealing on barium strontium titanate films deposited by radio frequency magnetron sputtering

The Effect Of Annealing Temperature On The Characterization Of Al/Pbte Films

Annealing Effects on the Structure and Electrical Characteristics of Amorphous Er 2 O 3 Films