Oxygen Gettering Cap to Scavenge Parasitic Oxide Interlayer in TiSi Contacts

Hao Yu,Marc Schaekers,Lin-Lin Wang,Jean-Luc Everaert,Yu-Long Jiang,Dan Mocuta,Naoto Horiguchi,Nadine Collaert,Kristin De Meyer
DOI: https://doi.org/10.1109/led.2019.2940819
IF: 4.8157
2019-01-01
IEEE Electron Device Letters
Abstract:Presenceof a native oxide interlayer degrades seriously the contact resistivity (c) of co-deposited TiSi (CD-TiSi) on Si: P. The oxide cannot be scavenged by the CD-TSi due to its low solid solubility of O. We tackle the problem by capping the CD-TiSi with an O gettering cap. Utilizing a Ti cap and two-step post-metal rapid thermal anneal, we reduce the c of the CD-TiSi on 2 x 1021 cm-3 doped Si: P by 3 times, down to 2x10(-9) center dot cm2. We also demonstrate efficiency of a La cap to scavenge the oxide.
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