Abstract:TiO2-doped HfO2 gate dielectric thin films have been deposited on Si(100) substrates by RF sputtering. The component, morphology, structure, optical and interfacial properties of Hf-1 xTixO2 films related to TiO2 concentration are systematically investigated by atomic force microscope (AFM), X-ray diffraction (XRD), spectroscopic ellipsometry (SE), X-ray photoelectron spectroscopy (XPS), and Fourier transformation infrared (FTIR). By employing Cauchy-Urbach model, the optical constants, such as refractive index (n), extinction coefficient (k), absorption coefficient (alpha), and optical band gap (E-g) have been determined precisely. Measurements from XRD have confirmed that TiO2 incorporating into HfO2 films leads to the increase of the crystallization temperature of HfO2 films with increasing the TiO2 concentration. SE analyses have indicated that reduction in band gap and refractive index has been observed with increasing the TiO2 component in Hf-1 xTixO2 films. The increase in Urbach parameter E-U with the increase of TiO2 concentration also suggests the rise in disorder for Hf-1 xTixO2 films. FTIR measurements for Hf-1 xTixO2/Si gate stack indicate the existence of the interfacial layer regardless of the TiO2 concentration. For the 9% TiO2-doped HfO2 samples, the shift in FTIR characteristic peak suggests the formation of the silicate layer, which leads to the suppressed interfacial layer growth during deposition. As a result, it can be conclude that the TiO2 component in Hf-1 xTixO2 films should be controlled precisely to guarantee interfacial properties of Hf-1 xTixO2/Si gate stacks. (C) 2014 Elsevier B.V. All rights reserved.

In Situ Observation of Oxygen Gettering by Titanium Overlayer on HfO2∕SiO2∕Si Using High-Resolution Rutherford Backscattering Spectroscopy

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

Oxidation Process of HfO/sub 2//sio/sub 2//si Structures Observed by High-Resolution RBS

Isotopic Labeling Study of the Oxygen Diffusion in HfO2∕SiO2∕Si

Interface Reaction of High-k Gate Stack Structures Observed by High-Resolution RBS

Annealing Temperature Dependent Microstructure and Optical Properties of HfxTi1-xO2 Thin Films

Oxygen Vacancy Induced Structure Change and Interface Reaction in HfO2 Films on Native SiO2/Si Substrate

Interdiffusion Studies for HfO2/Si by GIXR and XPS

Si Emission from the Sio2/Si Interface During the Growth of Sio2 in the Hfo2/Sio2/Si Structure

Room-temperature Atmospheric Oxidation of Si Nanocrystals after HF Etching

In Situ Photoemission Study on Initial Growth of HfO2 Films on Si(1 0 0)

Study of Interfacial Structure of HfO2thin Film on Si by Grazing Incidence X-Ray Reflectivity

X‐ray Photoelectron Spectroscopic Analysis of HfSiON Thin Films

HfO 2 -assisted SiO 2 reduction in HfO 2 /SiO 2 /Si stacks

Characterization of the Interface Between the Hf-based High-K Thin Film and the Si Using Spatially Resolved Electron Energy-Loss Spectroscopy.

Investigation of HfO2 Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle Spectroscopic Ellipsometry

Investigation of microstructure evolution in Pt-doped TiO2 thin films deposited by rf magnetron sputtering

HfO2/SiO2 interface chemistry studied by synchrotron radiation x-ray photoelectron spectroscopy

Interfacial Sio2 Scavenging Kinetics in Hfo2 Gate Stack

Oxygen Gettering Cap to Scavenge Parasitic Oxide Interlayer in TiSi Contacts

Engineering of interfacial layer between HfAl2O5 dielectric film and Si with a Ti-capping layer