Abstract:SiO2-interface layer (IL) “scavenging” in high-k gate stacks needs to be understood for the interface control as well as for further EOT scaling. A simple model that the oxygen vacancy (Vo) was involved in the scavenging was proposed, but further details have not been elucidated well. We have studied the SiO2-IL scavenging in HfO2/SiO2/Si gate stacks in UHV condition in place of metal electrode scavenging. This method has enabled us to study the diffusion and reaction in this system from the top surface without a metal gate. In this talk, we particularly focus on the following three steps in the scavenging process. (1) VO diffusion kinetics in scavenging This has been studied by controlling as-deposited HfO2 stoichiometry by changing the deposition conditions. (2) Substrate effect on scavenging Various types of substrates with a same gate stack have been used for the scavenging experiment. (3) Si diffusion kinetics in scavenging Si out-diffusion from HfO2/SiO2/Si gate stacks has been investigated through the mass spectroscopy. We present experimental results in each step. In particular, we notice that SiO2/Si interaction may be involved in this process, as well as that the scavenging causes SiO2-IL reduction. Furthermore, we propose an analytical model for the SiO2-IL scavenging. Interestingly, it looks like the Deal-Grove model for Si oxidation, but coefficients are related to each other in the scavenging. These results are important not only for scavenging SiO2-IL in HfO2/SiO2/Si stacks but also for establishing the oxide electronics, because understanding of both cation and anion kinetics in oxides is critical to control the hetero-interface characteristics.

Interface Reaction of High-k Gate Stack Structures Observed by High-Resolution RBS

Oxidation Process of HfO/sub 2//sio/sub 2//si Structures Observed by High-Resolution RBS

Si Emission from the Sio2/Si Interface During the Growth of Sio2 in the Hfo2/Sio2/Si Structure

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

Isotopic Labeling Study of the Oxygen Diffusion in HfO2∕SiO2∕Si

Modulation of Interfacial and Electrical Properties of ALD-derived HfAlO/Al2O3/Si Gate Stack by Annealing Temperature

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Oxygen Vacancy Induced Structure Change and Interface Reaction in HfO2 Films on Native SiO2/Si Substrate

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

HfO 2 -assisted SiO 2 reduction in HfO 2 /SiO 2 /Si stacks

Interdiffusion Studies for HfO2/Si by GIXR and XPS

Characterization of the Interface Between the Hf-based High-K Thin Film and the Si Using Spatially Resolved Electron Energy-Loss Spectroscopy.

In Situ Observation of Oxygen Gettering by Titanium Overlayer on HfO2∕SiO2∕Si Using High-Resolution Rutherford Backscattering Spectroscopy

Study of Si kinetics in interfacial SiO2 scavenging in HfO2 gate stacks

Interfacial Sio2 Scavenging Kinetics in Hfo2 Gate Stack

HfO2/SiO2 interface chemistry studied by synchrotron radiation x-ray photoelectron spectroscopy

(Invited) Scavenging Kinetics of Interfacial SiO2 in HfO2/SiO2/Si Gate Stacks

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Effect on passivation mechanism and properties of HfO 2 /crystalline-Si interface under different annealing atmosphere

(Invited) Scavenging Kinetics of Interfacial SiO<sub>2</sub> in HfO<sub>2</sub>/SiO<sub>2</sub>/Si Gate Stacks

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2