Abstract:The method established previously for studying the etching rates of micro-scale silicon and silica was used to study the etching process of silicon and silica on the Si(100) surface. Photolithography was used to pattern a positive photoresist mask to confine the etching area, and the atomic force microscopy was used to probe the etched surface. The lateral etching rate of silicon or silica on the silicon surface was defined, and the lateral and longitudinal etching rates of silicon and silica on the Si(100) surface in 40% ammonium fluoride aqueous solution were measured. The effect of the dissolved oxygen on the etching rates was studied by bubbling the solution with high purity nitrogen. The lateral and longitudinal etching rates of silicon and silica on the (100) surface increase with temperatures except for the lateral etching rate of silica in a N-2-bubbled solution which probably reaches the limit of diffusion controlled reaction. The etching rates of silicon and thermal silica on the Si(100) surface show remarkable difference with that on the Si (111) surface in both air-saturated and N-2-bubbled solutions. The apparent activation energies for the silicon and silica etching processing in ammonium fluoride solution were obtained from the etching rates at different temperatures in the range 20.6 similar to 34.1degreesC. The similarity of the apparent activation energies for the etching processing of silicon and silica on the (100) surface to that on the (111) surface probably suggests that the rate-determined-step is the same in both cases. A lot of gas bubbles are seen to aggregate on the surface in silicon dissolution process at 38.2degreesC, and it is found that the gas bubbles have great influence on the silicon etching rate. The formation of bubbles accelerates the silicon dissolution at the beginning but blocks the etching as the bubbles gradually aggregate on the surface.

Room-temperature Atmospheric Oxidation of Si Nanocrystals after HF Etching

Density Functional Theory Study on the Oxidation of Hydrosilylated Silicon Nanocrystals

In-Flight Dry Etching of Plasma-Synthesized Silicon Nanocrystals

Bonding of oxygen at the oxide/nanocrystal interface of oxidized silicon nanocrystals: An ab initio study

Characterization of the Interface Region During the Agglomeration of Silicon Nanocrystals in Silicon Dioxide

Density functional theory study on a 1.4 nm silicon nanocrystal coated with carbon

Fluorine-Passivated Silicon Nanocrystals: Surface Chemistry Versus Quantum Confinement

Surface modification of chlorine-passivated silicon nanocrystals.

Doping Efficiency, Dopant Location, and Oxidation of Si Nanocrystals

Formation and Oxidation of Si Nanoclusters in Er-Doped Si-Rich Siox

First-Principles Study on the Surface Chemistry of 1.4 Nm Silicon Nanocrystals: Case of Hydrosilylation

Hydrogen Bubbles and Formation of Nanoporous Silicon During Electrochemical Etching

Positron annihilation spectroscopy of the interface between nanocrystalline Si and SiO2

Oxidation Process of HfO/sub 2//sio/sub 2//si Structures Observed by High-Resolution RBS

On the Mechanism Underlying the Elimination of Nitrogen-Oxygen Shallow Thermal Donors in Nitrogen-Doped Czochralski Silicon at Elevated Temperatures

Microstructure Characterization of Oxidized Nanocrystalline Si:H Film by Transmission Electron Microscopy

Synchrotron radiation x-ray photoelectron spectroscopy of Si nanocrystals grown onto Al2O3∕Si surfaces

Quantum confinement and surface chemistry of 0.8–1.6 nm hydrosilylated silicon nanocrystals

Effect of HF and NaOH Etching on Chemical and Structure Stability of Hollow SiOC Ceramics

The Lateral and Longitudinal Etching Rates of Silicon and Silica on Si(100) Surface

Fluorine‐containing species on the hydrofluoric acid etched silicon single‐crystal surface