Abstract:HfO2 layers provide a highly effective passivation on p‐type silicon surfaces, resulting in implied open‐circuit voltages of 727 mV. The HfO2 coatings are made by spatial atomic layer deposition (SALD), which allows for very high deposition rates of several nanometers per second and is hence relevant for the production of future high‐efficiency solar cells. Spatial atomic layer deposition (SALD) is applied to the electronic passivation of moderately doped (≈1016 cm−3) p‐type crystalline silicon surfaces by thin layers of hafnium oxide (HfO2). For 10 nm thick HfO2 layers annealed at 400 °C, an effective surface recombination velocity Seff of 4 cm s−1 is achieved, which is below what has been reported before on moderately doped p‐type silicon. The one‐sun implied open‐circuit voltage amounts to iVoc = 727 mV. After firing at 700 °C peak temperature in a conveyor‐belt furnace, as applied in the production of solar cells, still a good level of surface passivation with an Seff of 21 cm s−1 is attained. Reducing the HfO2 thickness to 1 nm, the passivation virtually vanishes after firing (i.e., Seff > 1000 cm s−1). However, by adding a capping layer of plasma‐enhanced‐chemical‐vapor‐deposited hydrogen‐rich silicon nitride (SiNx) onto the 1 nm HfO2, a substantially improved firing stability is attained, as demonstrated by Seff values as low as 30 cm s−1 after firing, which is attributed to the hydrogenation of interface states. The presented study demonstrates that SALD‐deposited HfO2 layers and HfO2/SiNx stacks have the potential to evolve into an attractive surface passivation scheme for future solar cells.

Interfacial Structure and Electrical Properties of Ultrathin HfO2dielectric Films on Si Substrates by Surface Sol–gel Method

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

Fabrication and Electrical Characteristics of Ultrathin (Hfo2)(x)(sio2)(1-X) Films by Surface Sol-Gel Method and Reaction-Anneal Treatment

Modulation of the structural and optical properties of sputtering-derived HfO2 films by deposition power

Annealing Temperature Dependence on the Structural and Optical Properties of Sputtering-Grown High-K HfO2 Gate Dielectrics

Microstructure, Optical and Electrical Properties of Sputtered HfTiO High-K Gate Dielectric Thin Films

Thin Hfo2 Films Grown on Si(100) by Atomic Oxygen Assisted Molecular Beam Epitaxy

Structure and Dielectric Properties of HfO2 Thin Films

Investigation of HfO2 Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle Spectroscopic Ellipsometry

Fabrication and Characterization of Pulsed Laser Deposited Hfo2 Films for High-K Gate Dielectric Applications

Effect on passivation mechanism and properties of HfO 2 /crystalline-Si interface under different annealing atmosphere

Oxygen Vacancy Induced Structure Change and Interface Reaction in HfO2 Films on Native SiO2/Si Substrate

Interfacial Properties of Hfo2 Dielectric Film on Ge Substrate

Phase Separation and Interfacial Reaction of High-K HfAlOx Films Prepared by Pulsed-Laser Deposition in Oxygen-Deficient Ambient

Characterization of the Interface Between the Hf-based High-K Thin Film and the Si Using Spatially Resolved Electron Energy-Loss Spectroscopy.

Experimental investigation of dipole formation and modulation at Hf 0.5 Zr 0.5 O 2 /SiO 2 interface

Transparent Polycrystalline Monoclinic HfO2 Dielectrics Prepared by Plasma Assisted Pulsed Laser Deposition

Fabrication and characterization of La-doped HfO2 gate dielectrics by metal-organic chemical vapor deposition

Hafnium Oxide Layers Derived by Photo-Assisted Sol–gel Processing

Electronic Passivation of Crystalline Silicon Surfaces Using Spatial‐Atomic‐Layer‐Deposited HfO2 Films and HfO2/SiNx Stacks