Abstract:Sol-gel method is a low-cost material preparation method; however, it is difficult to obtain a stable sol containing easily hydrolyzable metal ions via this method. In this study, a stable hafnium(IV) oxide (HfO 2 ) sol was prepared by adding benzoyl acetone (BzAcH) modifier. Infrared absorption spectroscopy results showed that the BzAcH additive chelated with the Hf 4+ ions in the sol, thus improving the hydrolysis resistance of the HfO 2 sol, which in turn improved its stability. It was also found that the BzAcH-modified HfO 2 gel film exhibited ultraviolet (UV) photosensitivity. After UV exposure, the film did not dissolve easily in organic solvents. Based on these properties, the micro processing of the HfO 2 film was preliminarily explored, and HfO 2 microstructures were successfully obtained. Additionally, the relative permittivity ( epsilon r ) of HfO 2 exhibited minimum (-10.9) and maximum (-20.6) values at heat -treatment (HT) temperatures of 350 and 450 degrees C, respectively. With the continuous increase in the HT temperature, epsilon r first decreased and then increased slightly. Moreover, the current-voltage curves showed that the Pt/HfO 2 /LaNiO 3 (LNO) structure exhibited a pronounced bipolar resistive switching (RS) effect, which was attributed to the fact that LNO could be used as an electrode and an oxygen vacancy (OV 2+ ) storage layer for RS materials. Notably, the oxygen ions in HfO 2 with a low degree of crystallinity are more likely to migrate within its body (which makes it easier to form OV 2+ s), therefore, the "Set" voltage of low -crystallinity HfO 2 films is lower than that of high -crystallinity HfO 2 films. The RS mechanism can be explained by the OV 2+ conductive filament model. These results are of great practical significance for the low-cost preparation of HfO 2 and the application of LNO as an oxide electrode.

Fabrication and Electrical Characteristics of Ultrathin (Hfo2)(x)(sio2)(1-X) Films by Surface Sol-Gel Method and Reaction-Anneal Treatment

Microstructure Optimization and Optical and Interfacial Properties Modulation of Sputtering-Derived Hfo2 Thin Films by Tio2 Incorporation

Microstructure, Optical, Electrical Properties, and Leakage Current Transport Mechanism of Sol–gel-Processed High-K HfO2 Gate Dielectrics

Interfacial Structure and Electrical Properties of Ultrathin HfO2dielectric Films on Si Substrates by Surface Sol–gel Method

Deposition of Dense SiO2 Thin Films for Electrical Insulation Applications by Microwave ECR Plasma Source Enhanced RF Reactive Magnetron Sputtering

Annealing Temperature Dependent Microstructure and Optical Properties of HfxTi1-xO2 Thin Films

Microstructure, Optical Properties, and Optical Resonators of Hf1-Xtixo2 Amorphous Thin Films

Investigation of HfO2 Thin Films on Si by X-ray Photoelectron Spectroscopy, Rutherford Backscattering, Grazing Incidence X-ray Diffraction and Variable Angle Spectroscopic Ellipsometry

Electrical, Structural and Interfacial Characterization of HfO 2 Films on Si Substrates

Preparation of High-Quality HfO2 Thin Films on SOI Materials

Thin Hfo2 Films Grown on Si(100) by Atomic Oxygen Assisted Molecular Beam Epitaxy

Preparation of HfSiO4 Via Non-Hydrolytic Sol-Gel Method at Low Temperatures

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X‐ray Photoelectron Spectroscopic Analysis of HfSiON Thin Films

Solution-processed hafnium oxide dielectric thin films for thin-film transistors applications

Preparation and Patterning of HfO 2 Film Via Sol - Gel Method and Resistive Switching Effect of Pt/HfO 2 /lanio 3

Liquid Phase Deposition of Hafnium Oxide Thin Films

Fabrication and Characterization of Pulsed Laser Deposited Hfo2 Films for High-K Gate Dielectric Applications

Hafnium Oxide Layers Derived by Photo-Assisted Sol–gel Processing

Plasma Enhanced Atomic Layer Deposition of HfO2 with in Situ Plasma Treatment