Oxidation suppression in ytterbium silicidation by Ti∕TiN bicapping layer

Yu-Long Jiang,Qi Xie,Christophe Detavernier,R. L. Van Meirhaeghe,Guo-Ping Ru,Xin-Ping Qu,Bing-Zong Li,Anping Huang,Paul K. Chu
DOI: https://doi.org/10.1116/1.2464123
2007-01-01
Abstract:Ytterbium (Yb) silicide is a promising contact material due to its low contact resistance and small Schottky barrier height in contact with n-type Si. However, as one of the rare earth metals, Yb is easily oxidized during physical vapor deposition and rapid thermal annealing. In this article, a bilayered Ti/TiN cap is proposed and demonstrated to effectively suppress oxidation during Yb silicidation. The authors' results reveal that diffusion of Ti atoms in the TiN layer plays a key role in oxidation suppression. (c) 2007 American Vacuum Society.
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