Abstract:CoSi 2 nanostructures were formed through thermal agglomeration by annealing ultrathin Co film on Si substrate at high temperatures. The characteristics of the Schottky diodes with CoSi 2 nanostructures capped by a Pt layer were measured and fitted using thermionic emission theory. All the diodes have a ideality factor less than 1.1. The results show that the Schottky barrier height of these diodes significantly decreases as the annealing temperature for CoSi 2 agglomeration increases. The barrier height lowering is correlated with the agglomeration of CoSi 2 film and the formation of CoSi 2 nano-islands. The thermal field emission may be the major reason to cause barrier lowering. Although the Schottky contact interface consists of both CoSi 2 nano-islands and Pt film whose individual contact barrier height to Si is very different, the current-voltage-temperature measurements reveal that the interface homogeneity is not degraded as expected. The study demonstrates that the CoSi 2 nanostructures can both lower the Schottky barrier height and form an ideal Schottky contact with a Pt capping layer.

Oxidation suppression for YbSi2-X formation and new method to extract Schottky barrier height by admittance measurement

Oxidation suppression in ytterbium silicidation by Ti∕TiN bicapping layer

Modulation and Extraction of Schottky Barrier Height for Advanced Source/Drain Contact

Pre-deposition Growth of Interfacial SiO2 Layer by Low-Oxygen-partial-pressure Oxidation in the Al2O3/4H-SiC MOS Structure

Ab Initio Modeling of Schottky-Barrier Height Tuning by Yttrium at Nickel Silicide/Silicon Interface

Tuning Schottky Barrier Height in Metal/n-Type Germanium by Inserting an Ultrathin Yttrium Oxide Film

Schottky Contact Barrier Height Extraction by Admittance Measurement

Fermi Level Unpinning and Schottky Barrier Modification by Ti, Sc and V Incorporation at Nisi2/Si Interface

Schottky barrier height lowering induced by CoSi 2 nanostructure

Schottky Behavior at Ag/Nb-1.0wt%-doped SrTiO3 Interface

Variation of Schottky Barrier Height Induced by Dopant Segregation Monitored by Contact Resistivity Measurements

Investigation of TiO$_x$ barriers for their use in hybrid Josephson and tunnelling junctions based on Ba-122 thin films

Characterization of Schottky barrier contact between ultra thin epitaxial CoSi2/n-Si

Influence Of Trench Oxide On Schottky Barrier Height For Tisix/Si Power Diode

Cu Contact on NiSi/Si with a Ru/TaN Barrier Stack

Schottky Barrier Height Inhomogeneities of Nickel Mono-Silicide/N-Si Contact Studied by I-V-T Technique

Cu Contact on NiSi/Si with Thin Ru/TaN Barrier

The role of Schottky barrier in the resistive switching of SrTiO3: direct experimental evidence

The Impact of the Surface Treatments on the Properties of Gan/3c-Sic/Si Based Schottky Barrier Diodes

The Modulation of Schottky Barrier Height of NiSi/n-Si Schottky Diodes by Silicide As Diffusion Source Technique

Observation Of Contact Resistivity Independence From Schottky Barrier Height On Heavily Doped P-Type Sige