Abstract:Highlights • REOs as passivation layers can significantly improve MOS dielectric performance. • Y 2 O 3 was first laminated with TiO 2 for a novel high k film by magnetron sputtering. • TiO 2 -Y 2 O 3 film displays a k value of 28.24, which is more than 1.4 times of HfO 2 . • Schottky emission is the dominant electrical mechanism for TiO 2 -Y 2 O 3 film. • 500°C-annealed temperature, 17 nm-TiO 2 and 3-nm Y 2 O 3 were optimal conditions. In order to achieve a super gate dielectric performance, rare earth oxides featuring for large band gap, good thermodynamic stability and relatively high k value were selected to laminated with TiO 2 film to preparate bilayer dielectric films. As an example, the microstructure, morphology, band gap structure and electrical performance of TiO 2 -Y 2 O 3 bilayer films were systematically investigated. Results show that stacking sequence of TiO 2 and Y 2 O 3 sublayers has a significant impact on the dielectric performance and Y 2 O 3 film as a passivation layer can effectively improve electrical properties. Besides, the electrical behaviors analysis of TiO 2 -Y 2 O 3 , Y 2 O 3 -TiO 2 , Y 2 O 3 and TiO 2 samples was carried out by impedance spectra and equivalent circuit. The result shows that TiO 2 -Y 2 O 3 /Si sample holds the largest internal resistance of 74665 Ω among four samples. Moreover, the most outstanding properties of Pt/TiO 2 -Y 2 O 3 /Si capacitor are achieved by varying the thickness of sublayers and annealing temperature. 500 °C-annealed bilayer film with 17 nm-TiO 2 and 3-nm Y 2 O 3 displays a k value of 28.24, which is more than 1.4 times of current commercial HfO 2 . Further, Schottky emission is determined to be leakage current transport mechanism for TiO 2 -Y 2 O 3 bilayer films. Inspired by this result, the electrical performance of more general Pt/TiO 2 -REOs/Si MOS capacitors (RE=Sc, La, Ce, Gd and Pr) was measured. The combination of TiO 2 film and REOs passivation layer with the satisfying performance provides promising candidates for future Si-based integrated circuit (IC). Graphical abstract Rare earth oxide (REO, RE=Sc, Y, La, Ce, Pr and Gd) as a passivation layer to laminate with TiO 2 for high k dielectric can significantly improve MOS dielectric performance. Download : Download high-res image (229KB) Download : Download full-size image

Significantly Improved High K Dielectric Performance: Rare Earth Oxide As a Passivation Layer Laminated with TiO2 Film

Significantly improved high k dielectric performance: Rare earth oxide as a passivation layer laminated with TiO 2 film

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