Abstract:Wearable electronics represented by flexible displays and flexible sensors have been attracting enormous attention due to portability, miniaturization and low power consumption. Due to the dramatic increase in the number of display and sensing units, the power consumption and accuracy of the devices are facing great challenges. Active‐matrix thin‐film transistor (TFT) backplanes can effectively reduce signal crosstalk and power consumption of wearable electronics. For TFT devices, the gate insulation layer is one of key factors affecting the device performance such as device mobility, operating voltage, and bias stability, etc. High quality of solution‐processed oxide dielectric films usually are obtained at a high temperature (>400 °C), being a challenge for compatibility with flexible plastic substrates. In this work, low‐temperature annealing processes (the electric oven (EO) and deep ultraviolet (DUV) processing) of high‐k zirconia dielectric films was investigated. Compared to the thermal annealing process, the EO or DUV processing‐annealing process could obtain an approximate dielectric properties with that of thermal annealing process. The EO and DUV processing could effectively promoted the MO framework and the elimination of oxygen defects in the spin‐coating films. DUV processing ZrO 2 film annealed at 150 °C exhibited an excellent properties including a large capacitance of 220 nF/cm 2 and low leakage current of ~10 ‐7 A/cm 2 . These data suggest that combining low‐temperature annealing with EO and DUV irradiation holds great promise for the rapid, low‐temperature production of high‐quality and flexible oxide electronic devices.

Solution-processed rare-earth thulium oxide with high permittivity for low-voltage transistor and inverters applications

Eco-Friendly, Water-Induced In2O3 Thin Films for High-Performance Thin-Film Transistors and Inverters

Solution-processed ytterbium oxide dielectrics for low-voltage thin-film transistors and inverters

Fully solution-induced high performance indium oxide thin film transistors with ZrOx high-k gate dielectrics

Microstructure, optical and electrical properties of solution-derived peroxo-zirconium oxide gate dielectrics for CMOS application

P‐7.10: Facile low‐temperature solution‐processed ZrO<sub>2</sub> films as high‐k dielectrics for flexible low ‐ power thin‐film transistors

Low-Temperature Solution-Processed Gate Dielectrics for High-Performance Organic Thin Film Transistors

High-Performance Thin-Film Transistors and Inverters Based on ALD-Derived Ultrathin Al 2 O 3 -Passivated CeO 2 Bilayer Gate Dielectrics

Solution-Processed High-K Magnesium Oxide Dielectrics For Low-Voltage Oxide Thin-Film Transistors

High-k erbium oxide film prepared by sol-gel method for low-voltage thin-film transistor

Solution Processed Metal Oxide High-κ Dielectrics for Emerging Transistors and Circuits

Solution-Driven HfLaO x -Based Gate Dielectrics for Thin Film Transistors and Unipolar Inverters

Solution‐Processed Alkaline Lithium Oxide Dielectrics for Applications in N‐ and P‐type Thin‐Film Transistors

A water-induced high- k yttrium oxide dielectric for fully-solution-processed oxide thin-film transistors

Solution-processed yttrium oxide dielectric for high-performance IZO thin-film transistors

Inkjet‐Printed Ternary Oxide Dielectric and Doped Interface Layer for Metal‐Oxide Thin‐Film Transistors with Low Voltage Operation

Enhancement of electrical properties of solution-processed oxide thin film transistors using ZrO<sub>2</sub> gate dielectrics deposited by an oxygen-doped solution

Approaching Subthreshold-Swing Limit for Thin-Film Transistors by Using a Giant-Dielectric-constant Gate Dielectric

Ternary Gd-Y-O High K Oxide Films for Next-Generation Gate Dielectrics and Their Annealing Temperature Effects

Fully solution-processed low-voltage aqueous In2O3 thin-film transistors using an ultrathin ZrO(x) dielectric.

Aqueous Solution Induced High-Dielectric-Constant AlOx :Y Films for Thin-Film Transistor Applications