Performance of Schottky diode of structured FTO/TiO 2 /Al employing hydrogen fluoride treated TiO 2 : Qualitative and quantitative analysis

Ramjan Sk,Animesh Biswas,Animesh Layek,Partha Pratim Ray
DOI: https://doi.org/10.1016/j.chemphys.2024.112233
IF: 2.552
2024-02-22
Chemical Physics
Abstract:Having ascertained the improvement of band gap and conductivity of the synthesized TiO 2 after HF treatment under consideration, it occurred to us that the materials may perform as the better Schottky barrier diode. To verify our presumption, we studied the I-V characteristic of the device fabricated in a sandwich configuration of FTO/sample/Al. The comparative studies show better potentiality of the material in subject to study the qualitative and quantitative measures of the Schottky devices. The work is concluded by examined the various characteristic parameters related with performance of device that is fabricated with HF treated and untreated TiO 2 .
chemistry, physical,physics, atomic, molecular & chemical
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