Abstract:ConspectusPhotoelectrochemical water splitting is a promising avenue for sustainable production of hydrogen used in the chemical industry and hydrogen fuel cells. The basic components of most photoelectrochemical water splitting systems are semiconductor light absorbers coupled to electrocatalysts, which perform the desired chemical reactions. A critical challenge for the design of these systems is the lack of stability for the majority of desired semiconductors under operating water splitting conditions. One strategy to address this issue is to protect the semiconductor by covering it with a stabilizing insulator layer, creating a metal-insulator-semiconductor (MIS) architecture, which has demonstrated improved stability. In addition to enhanced stability, the insulator layer may significantly affect the electron and hole transfer, which governs the recombination rates. Furthermore, the insertion of an insulator layer leads to the introduction of additional insulator/electrocatalyst and insulator/semiconductor interfaces. These interfaces can impact the system's performance significantly, and they need to be carefully engineered to optimize the efficiencies of MIS systems. In this Account, we describe our recent progress in shedding light on the critical role of the insulator and the interfaces on the performance of MIS systems. We discuss our findings by focusing on the concrete example of planar n-type Si protected by a HfO2 insulator layer and coupled to a Ni or Ir electrocatalyst that performs the oxygen evolution reaction, one of the water splitting half-reactions. To improve our fundamental understanding of the insulator layer, we precisely control the HfO2 insulator thickness using atomic layer deposition (ALD), and we perform a series of rigorous electrochemical experiments coupled with theory and modeling. We demonstrate that by tuning the insulator thickness, we can control the flux and recombination of photogenerated electrons and holes to optimize the generated photovoltage. Despite optimizing the thickness, we find that the maximum generated photovoltage in MIS systems is often significantly lower than the upper performance limit, i.e., there are additional losses in the system that could not be addressed by optimizing the insulator thickness. We identify the sources of these losses and describe strategies to minimize them by a combination of improving the semiconductor light absorption, removing nonidealities associated with interfacial defects, and finding alternative insulators with improved charge carrier selectivity. Finally, we quantify the improvements that can be obtained by implementing these specific strategies. Our collective work outlines strategies to analyze MIS systems, identify the sources of efficiency losses, and optimize the design to approach the fundamental performance limits. These general approaches are broadly applicable to photoelectrochemical materials that utilize sunlight to produce value-added chemicals.

Titanium oxide crystallization and interface defect passivation for high performance insulator-protected Schottky junction MIS photoanodes.

Isolating the Photovoltaic Junction: Atomic Layer Deposited TiO2-RuO2 Alloy Schottky Contacts for Silicon Photoanodes

Operandoelectrochemical Study of Charge Carrier Processes in Water Splitting Photoanodes Protected by Atomic Layer Deposited TiO2

A Thin-Film Silicon Based Photocathode With A Hydrogen Doped Tio2 Protection Layer For Solar Hydrogen Evolution

Substantial lifetime enhancement for Si-based photoanodes enabled by amorphous TiO 2 coating with improved stoichiometry

Hole-Selective Hybrid TiO2 Layer towards Long-Term Stability of Low-Cost Photoanodes in Solar Water Oxidation

Designing Efficient Solar-Driven Hydrogen Evolution Photocathodes Using Semitransparent Moq(X)Cl(Y) (Q = S, Se) Catalysts on Si Micropyramids

An effective strategy for promoting charge separation by integrating heterojunctions and multiple homojunctions in TiO2 nanorods to enhance photoelectrochemical oxygen evolution

Titanium-coated High-Density Fe2O3 Single Crystal Nanowire Array for Solar Water Splitting

Crystalline TiO2 protective layer with graded oxygen defects for efficient and stable silicon-based photocathode

Regulating Phase Junction and Oxygen Vacancies of TiO2 Nanoarrays for Boosted Photoelectrochemical Water Oxidation

Two-dimensional lateral anatase-rutile TiO 2 phase junctions with oxygen vacancies for robust photoelectrochemical water splitting

A thin-film silicon based photocathode with a hydrogen doped TiO<sub>2</sub> protection layer for solar hydrogen evolution

Stabilization of Silicon Photoanode By Hafnium Zirconium Oxide Interlayer for Efficient Solar Water Oxidation

Defect-Tolerant TiO 2 -Coated and Discretized Photoanodes for >600 h of Stable Photoelectrochemical Water Oxidation

Sputter-Coated TiO 2 Films as Passivation and Hole Transfer Layers for Improved Energy Conversion with Solar Fuel WO 3 /CuWO 4 Photoanodes

TiO 2 /TiN Interface Enables Integration of Ni 5 P 4 Electrocatalyst with a III–V Tandem Photoabsorber for Stable Unassisted Solar-Driven Water Splitting

A high-performance TiO2 protective layer derived from non-high vacuum technology for a Si-based photocathode to enhance photoelectrochemical water splitting

Design Principles for Efficient and Stable Water Splitting Photoelectrocatalysts

Defects Give New Life to an Old Material: Electronically Leaky Titania as a Photoanode Protection Layer

Conductive layer protected and oxide catalyst-coated thin-film silicon solar cell as an efficient photoanode