Tuning of Electrical and Optical Properties of Tantalum Doped TiO2 Flims Prepared by Sol-gel Method

Wen LI,Gang XU,Jianxun WANG,Gaorong HAN,Chenlu SONG
DOI: https://doi.org/10.14136/j.cnki.issn1673-2812.2018.01.003
2018-01-01
Abstract:Ta-doped TiO2 films have been prepared on quartz substrate by sol-gel method following a post-annealed process in hydrogen to improve the electrical and optical properties.The crystal phases,microstructure,electrical and optical properties of TiO2:Ta films were analyzed by XRD,SEM,Hall effect measurement,UV-Vis spectrophotometry and ellipsometry.The results show that Ta5+ ion in TiO2 lattice greatly improves n-type conductivity of TiO2 films.The resistivity of Ta-doped TiO2 films decreased largely after post-annealing in hydrogen.The improved electrical properties of films may be attributed to lager grain size of films and the formation of oxygen vacancies.The Ta-doped TiO2 films with 8% Ta concentration exhibited the he minimum resistivity of 7.95Ω · cm and the transmittance of about 75% in the visible light region,making it a candidate of promising TCO materials.
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