Abstract:The effects of Ti substitution on the crystal chemistry and microwave dielectric properties of Ga1-xTa1-xTi2xO4 were investigated. GaTaO4 adopts a 1:1-ordered monoclinic alpha-PbO2 type structure. At 1300 degrees C the Ga1-xTa1-xTi2xO4 system formed a monoclinic alpha-PbO2 type solid solution when x <= 0.05, and further Ti substitution in Ga1-xTa1-xTi2xO4 induced a phase transformation from alpha-PbO2 to rutile, leading to a rutile solid solution when x >= 0.15. Within the intermediate composition range 0.075 <= x <= 0.1, a mixture of alpha-PbO2 and rutile phases formed, which gradually transformed into a single rutile phase upon being fired at 1350-1400 degrees C. At 1400 degrees C the compositions where x = 0-0.025 remained in monoclinic alpha-PbO2 type phases, while the x = 0.05 composition transformed into a rutile polymorph, implying that Ti substitution is favorable for stabilizing the high temperature rutile polymorph of GaTaO4 down to room temperature. The monoclinic Ga1-xTa1-xTi2xO4 (x = 0, 0.05) ceramics exhibited a low permittivity (epsilon(r)) values of similar to 16-20, high Qf values similar to 45 000-68 000 GHz and large negative temperature coefficients of the resonance frequency, tau(f) of -56 ppm degrees C-1 to -47 ppm degrees C-1. Ti substitution in Ga1-xTa1-xTi2xO4 increased epsilon(r) to similar to 40 and tau(f) to similar to 53 ppm degrees C-1 in the range x = 0-0.4, while the Qf values exhibited a tendency to decrease with Ti substitution. The rutile solid solution showed, for the first time, a tunable tau(f) from a negative value to a positive value and optimum microwave dielectric properties were achieved for rutile Ga0.75Ta0.75Ti0.5O4: epsilon(r) similar to 37, Qf similar to 30 000 GHz and tau(f) similar to 4.4 ppm degrees C-1. The factors controlling the dielectric loss and tau(f) in Ga1-xTa1-xTi2xO4 are discussed in terms of the polymorphism, defects, charge disorder and polarizability associated with the Ti substitution.

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