Abstract:Giant dielectric (GD) oxides exhibiting extremely large dielectric permittivities (ε' > 104) have been extensively studied because of their potential for use in passive electronic devices. However, the unacceptable loss tangents (tanδ) and temperature instability with respect to ε' continue to be a significant hindrance to their development. In this study, a novel GD oxide, exhibiting an extremely large ε' value of approximately 7.55 × 104 and an extremely low tanδ value of approximately 0.007 at 103 Hz, has been reported. These remarkable properties were attributed to the synthesis of a Lu3+/Nb5+ co-doped TiO2 (LuNTO) ceramic containing an appropriate co-dopant concentration. Furthermore, the variation in the ε' values between the temperatures of -60 °C and 210 °C did not exceed ±15% of the reference value obtained at 25 °C. The effects of the grains, grain boundaries, and second phase particles on the dielectric properties were evaluated to determine the dielectric properties exhibited by LuNTO ceramics. A highly dense microstructure was obtained in the as-sintered ceramics. The existence of a LuNbTiO6 microwave-dielectric phase was confirmed when the co-dopant concentration was increased to 1%, thereby affecting the dielectric behavior of the LuNTO ceramics. The excellent dielectric properties exhibited by the LuNTO ceramics were attributed to their inhomogeneous microstructure. The microstructure was composed of semiconducting grains, consisting of Ti3+ ions formed by Nb5+ dopant ions, alongside ultra-high-resistance grain boundaries. The effects of the semiconducting grains, insulating grain boundaries (GBs), and secondary microwave phase particles on the dielectric relaxations are explained based on their interfacial polarizations. The results suggest that a significant enhancement of the GB properties is the key toward improvement of the GD properties, while the presence of second phase particles may not always be effective.

Origin of Colossal Dielectric Permittivity in (Nb + Ga) Co-Doped TiO 2 Single Crystals

Origin of Colossal Dielectric Permittivity of Rutile Ti0.9In0.05Nb0.05O2: Single Crystal and Polycrystalline

Colossal Dielectric Permittivity in (al+nb) Co-Doped Ba0.4Sr0.6TiO3 Ceramics

Colossal dielectric behavior of Nb-doped SrTiO 3 single crystal

Controlling dielectric properties of Nb+X (X = Al, Ga, Nb) co-doped and Nb-doped rutile-type TiO2 single crystals

Colossal Permittivity Characteristics of (Nb, Si) Co-Doped TiO2 Ceramics

Investigation on the Electrical Properties of Anatase and Rutile Nb-Doped Tio2 by Gga(+U)

Microstructural Evolution and High-Performance Giant Dielectric Properties of Lu3+/Nb5+ Co-Doped TiO2 Ceramics

Enhanced dielectric performance of Niobium and Thulium modified rutile TiO 2 ceramics by defect regulation

Giant permittivity in Nb-doped SrTiO3 single crystal: Compositional gradient and local structure

The Primary Origin of Excellent Dielectric Properties of (Co, Nb) Co-Doped TiO2 Ceramics: Electron-Pinned Defect Dipoles vs. Internal Barrier Layer Capacitor Effect

Giant Dielectric Permittivity and Electronic Structure in Hydrogenated (La/Mn) Merge Codoped TiO2 Ceramics

Colossal Permittivity and Ultralow Dielectric Loss in Nb-doped SrTiO 3 Ceramics

Origins of Giant Dielectric Properties with Low Loss Tangent in Rutile (Mg1/3Ta2/3)0.01Ti0.99O2 Ceramic

Columbite-rich Multiphase TiO2 Nanoceramic with Superior Mechanical and Dielectric Properties

Thermal stable and ultralow dielectric loss in (Gd0.5Ta0.5) Ti1-O2 giant permittivity ceramics by defect engineering

Microstructure, Colossal Permittivity, and Humidity Sensitivity of (na, Nb) Co-Doped Rutile TiO2 Ceramics

The abnormal multiple dielectric relaxation responses of Al3+ and Nb5+ co-doped rutile TiO2 ceramics

Grain Boundary Effect on Dielectric Properties of (nd0.5nb0.5) Ti1-O2 Ceramicsceamics

Enhanced Dielectric Properties in (in, Nb) Co-Doped BaTiO3 Ceramics

Microstructures and Properties of N-Doped TiO_2 Films Grown by Dielectric Barrier Discharge Chemical Vapor Deposition