Microstructures and Properties of N-Doped TiO_2 Films Grown by Dielectric Barrier Discharge Chemical Vapor Deposition

Li Zhe,Zhang Xiwen,Han Gaorong
DOI: https://doi.org/10.13922/j.cnki.cjovst.2008.04.009
2008-01-01
Abstract:N-doped titanium dioxide films were grown by dielectric barrier discharge chemical vapor deposition(DBD-CVD) with titanium-tetraisopropoxide(TTIP) as the Ti source,NH3 and N2O as the precursor of nitrogen,respectively.The films were characterized with X-ray diffraction(XRD),X-ray photoelectron spectroscopy(XPS),scanning electron microscopy(SEM),and ultraviolet visible spectroscopy(UV-Vis).The results show that N-doping significantly affects the microstructures and properties of the films.For instance,N-doping considerably changes the growth,crystal orientation and surface morphology of the anatase phased TiO2 films.Moreover,N-doped TiO2 films have a narrower band-gap,and higher visible light induced photo-catalysis and hydrophilicity than the control sample.We found that when it comes to N-doping,NH3 works better than N2O does.
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