Microstructure and Properties of N-Doped TiO_2 Films Grown by Dielectric Barrier Discharge Enhanced Chemical Vapor Deposition(DBD-CVD)

高倩,李喆,李铭,刘涌,宋晨路,韩高荣
DOI: https://doi.org/10.14136/j.cnki.issn1673-2812.2012.01.003
2012-01-01
Abstract:N-doped TiO2 films were grown by dielectric barrier discharge enhanced chemical vapor deposition(DBD-CVD) with TTIP and NH3 as precursors.X-ray diffractometry(XRD),ultraviolet-visible light(UV-Vis) spectroscopy,X-ray photoelectron spectroscopy(XPS) and scanning electron microscopy(SEM) were used to characterize the films.We also tested the photocatalytic activity and hydrophilicity of the films.It is found that there is only anatase phase in the TiO2 films grown by DBD-CVD and the flux of N-doping sources change the growth orientation,affect the surface microstructure of thin films and narrower the band gap,improve the visible-light-induced photocatalytic activity and hydrophilicity of TiO2 thin films.
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