Abstract:(Ln + Nb) co-doped TiO2 polycrystalline ceramics possess remarkable dielectric behaviors, but their origin is still not fully understood. Compared to ceramic materials, a single crystal could keep most of the original material's properties and eliminate interference due to grain boundaries and pores, thereby useful for exploring the origin of the material's properties. Here, Ga3+ with a radius close to that of the Ti4+ ion was selected as an acceptor ion to study the properties. To this end, rutile single crystals and (Nb + Ga) co-doped rutile single crystals were prepared by the Verneuil method. The permittivity of the doped single crystal at frequencies from 20 Hz to 2 MHz was found to be greater than 15,000, and the dielectric loss was kept below 0.08. The latter value was much smaller than the reported values of rutile single crystal samples. Electrochemical impedance spectroscopy and X-ray photoelectron spectroscopy indicated significantly enhanced dielectric properties, mainly attributed to the highly localized electron-pinned defect dipoles rather than the surface barrier layer capacitor effect. The electrons tightly bounded by the local electric dipole defect clusters can only range over a very small distance, which made the doped crystal have a large dielectric constant over a wide frequency range and maintain a low dielectric loss. In sum, the use of single crystals as a research object greatly provided insights into the origin and optimization of giant dielectric properties of TiO2-based materials.The Supporting Information is available free of charge at https://pubs.acs.org/doi/10.1021/acs.cgd.1c00611.Diagram of the crystal growth process; XRD and macroscopic diagram of Nb–TiO2 and Ga–TiO2 crystals; high-magnification SEM of the NGTO crystal; and XRD peak migration image of TiO2, Nb–TiO2, Ga–TiO2, and NGTO crystals (PDF)This article has not yet been cited by other publications.

Controlling dielectric properties of Nb+X (X = Al, Ga, Nb) co-doped and Nb-doped rutile-type TiO2 single crystals

Colossal Dielectric Permittivity in (al+nb) Co-Doped Ba0.4Sr0.6TiO3 Ceramics

Origin of Colossal Dielectric Permittivity in (Nb + Ga) Co-Doped TiO 2 Single Crystals

Investigation on the Electrical Properties of Anatase and Rutile Nb-Doped Tio2 by Gga(+U)

Giant Permittivity Up to 100 MHz in La and Nb Co‐doped Rutile TiO2 Ceramics

Origin of Colossal Dielectric Permittivity of Rutile Ti0.9In0.05Nb0.05O2: Single Crystal and Polycrystalline

Colossal dielectric behavior of Nb-doped SrTiO 3 single crystal

Effect of Nb Doping Concentration on Transparent Conductivity of TiO2 Films Fabricated by Sol-Gel Method

The abnormal multiple dielectric relaxation responses of Al3+ and Nb5+ co-doped rutile TiO2 ceramics

Microstructure, Colossal Permittivity, and Humidity Sensitivity of (na, Nb) Co-Doped Rutile TiO2 Ceramics

Controllable Optical and Electrical Properties of Nb Doped TiO2 Films by RF Sputtering

Enhanced dielectric performance of Niobium and Thulium modified rutile TiO 2 ceramics by defect regulation

The Dielectric Properties for (nb,in,b) Co-Doped Rutile TiO2 Ceramics

Colossal Permittivity Characteristics of (Nb, Si) Co-Doped TiO2 Ceramics

Origin of Colossal Dielectric Response in (in + Nb) Co-Doped TiO2 Rutile Ceramics: a Potential Electrothermal Material

Enhanced Dielectric Performance of Niobium and Thulium Modified Rutile TiO2 Ceramics by Defect Regulation

Investigation on dielectric properties of BaTiO3 co-doped with Ni and Nb

Giant permittivity in Nb-doped SrTiO3 single crystal: Compositional gradient and local structure

Optimum in the thermoelectric efficiency of nanostructured Nb-doped TiO2 ceramics: from polarons to Nb-Nb dimers

Low‐temperature Maxwell‐Wagner Relaxation in (na + Nb) Co‐doped Rutile TiO2 Colossal Permittivity Ceramics

High dielectric permittivity and ultralow dielectric loss in Nb-doped SrTiO 3 ceramics