Characterization of defect levels in β-Ga 2 O 3 single crystals doped with tantalum

Haoyue Liu,Naiji Zhang,Junhua Yin,Changtai Xia,Zhe Chuan Feng,Kaiyan He,Lingyu Wan,H. F. Mohamed

DOI: https://doi.org/10.1039/d0ce01639j

IF: 3.756

2021-01-01

CrystEngComm

Abstract:Optical properties and defect characterization of Ta-doped β-Ga 2 O 3 single crystals grown by the optical floating zone method.

chemistry, multidisciplinary,crystallography

What problem does this paper attempt to address?

Tuning Electrical Conductivity of Β-Ga2o3 Single Crystals by Ta Doping

Huiyuan Cui,H. F. Mohamed,Changtai Xia,Qinglin Sai,Wei Zhou,Hongji Qi,Jingtai Zhao,Jiliang Si,Xiaoli Ji

DOI: https://doi.org/10.1016/j.jallcom.2019.02.076

IF: 6.2

2019-01-01

Journal of Alloys and Compounds

Abstract:Ta-doped beta-Ga2O3 single crystals were grown to regulate the electrical properties of beta-Ga2O3. The carrier concentration is intentionally controllable, and can be defined from 3.6 x 10(16) cm(-3) to 3.0 x 10(19) cm(-3), by controlling Ta concentration. The optical transmittance of Ta-doped single crystals was as high as 70%-80% in the visible region. In addition, it distinguished by a decline trend in the IR region, which attributed to the increase of the carrier concentration with Ta doping. Raman spectra revealed that the intensity and the FWHM of GaO6 octahedra peaks increased with increasing Ta content. DLTS showed only one deep level defect at 0.73 eV below the conduction band, and this defect had little contribution to the carrier concentration. (C) 2019 Published by Elsevier B.V.
An Optical Spectroscopy Study of Defects in Lithium Tantalate Single Crystals

Xiangke He,Keyan Li,Meinan Liu,Yali He,Xu Zhang,Yequan Zhao,Dongfeng Xue

DOI: https://doi.org/10.1016/j.optcom.2007.12.082

IF: 2.4

2008-01-01

Optics Communications

Abstract:The congruent, stoichiometric, and Mg doped stoichiometric LiTaO3 single crystals have been successfully grown by the Czochralski technique. The evolution of defect structures caused by varying composition and post-growth processing has been evaluated from the optical absorption and photoluminescence measurements. Optical absorption studies showed that the UV absorption edge is very sensitive to the composition of LiTaO3 crystals. Photoluminescence of various LiTaO3 single crystals at room temperature was observed. The emission bands centered at 360, 430, and 530nm were assigned to different defects, which can well show the defect information in LiTaO3 crystals.
Tuning of Electrical and Optical Properties of Tantalum Doped TiO2 Flims Prepared by Sol-gel Method

Wen LI,Gang XU,Jianxun WANG,Gaorong HAN,Chenlu SONG

DOI: https://doi.org/10.14136/j.cnki.issn1673-2812.2018.01.003

2018-01-01

Abstract:Ta-doped TiO2 films have been prepared on quartz substrate by sol-gel method following a post-annealed process in hydrogen to improve the electrical and optical properties.The crystal phases,microstructure,electrical and optical properties of TiO2:Ta films were analyzed by XRD,SEM,Hall effect measurement,UV-Vis spectrophotometry and ellipsometry.The results show that Ta5+ ion in TiO2 lattice greatly improves n-type conductivity of TiO2 films.The resistivity of Ta-doped TiO2 films decreased largely after post-annealing in hydrogen.The improved electrical properties of films may be attributed to lager grain size of films and the formation of oxygen vacancies.The Ta-doped TiO2 films with 8％ Ta concentration exhibited the he minimum resistivity of 7.95Ω · cm and the transmittance of about 75％ in the visible light region,making it a candidate of promising TCO materials.
Defect energy levels in monoclinic β-Ga2O3

Xin Zhu,Ying-Wu Zhang,Sheng-Nan Zhang,Xiao-Qing Huo,Xing-Hua Zhang,Zhi-Qing Li

DOI: https://doi.org/10.1016/j.jlumin.2022.118801

IF: 3.6

2022-06-01

Journal of Luminescence

Abstract:The defect levels in semiconductor are crucial to the performance of related devices. However, the positions of the defect levels in monoclinic β-Ga2O3, such as that for oxygen vacancy (VO), Ga–O divacancy, and self-trapped hole (STH), are still controversial. In this paper, we systematically investigated the photoluminescence and photoluminescence excitation spectra of undoped, Si-doped, and Mg-doped β-Ga2O3 single crystals grown by the edge-defined film-fed growth method. It is found that the oxygen vacancies are deep donors and their levels are related to the coordinations of the vacancies. For each crystal, the recombination between VO and Ga–O divacancy levels is the origin of the blue emission, and the red emission originates from the transition from VO to STH levels. The location of STH level is also related to the geometrical position of oxygen. For the Si-doped crystal, no red emission is observed due to the annihilation of STHs. While a Mg impurity level is produced at ∼1 eV above the valence band maximum, which causes an extra red emission in the spectra of Mg-doped crystal. Our results strongly support the recent theoretical results obtained via first-principle calculations [Q. D. Ho et al., Phys. Rev. B 97 (2018) 115163] and could be benefit for designing β-Ga2O3 related devices.

optics
Epitaxial tantalum‐doped β‐Ga2O3 thin films grown on MgO (001) substrate by pulsed laser deposition

Haobo Lin,Ningtao Liu,Wei Wang,Xiaoli Zhang,Dongyang Han,Wenrui Zhang,Jichun Ye

DOI: https://doi.org/10.1002/pssr.202400023

2024-03-03

physica status solidi (RRL) - Rapid Research Letters

Abstract:Epitaxial thin films of tantalum‐doped β‐Ga2O3 (Ta‐Ga2O3) were grown on MgO (001) substrates to study the effect of Ta doping on the electrical properties of β‐Ga2O3 films. X‐ray diffraction measurements show that the films with different Ta doping concentrations are (00l)‐oriented single‐crystalline β‐Ga2O3 without impurity phases. The incorporation of the Ta element modifies the electrical properties of Ta‐Ga2O3 films significantly. At a very low doping ratio of 0.05 mol%, the Ta‐Ga2O3 film showed a minimum resistivity of 2.32 Ω·cm and a carrier concentration of 2.48×1017 cm‐3. The corresponding activation energy of Ta element in the film was 16.8 meV, suggesting that the Ta element is a promising shallow donor dopant. The XPS analysis confirms that the Fermi level of the Ga2O3 films shifts towards the conduction band minimum after the introduction of Ta ions. These results indicate that the transition metal element Ta could be an effective n‐type dopant for modulating the carrier transport behavior of β‐Ga2O3 films. This article is protected by copyright. All rights reserved.

physics, condensed matter, applied,materials science, multidisciplinary
Research on Defects and Domain Characteristics of MgO-doped Near-Stoichiometric Lithium Tantalate in Room-Temperature Polarization Process

BaoShen Jia,YeQuan Zhao,XueFeng Zhang

DOI: https://doi.org/10.1007/s11434-009-0600-x

2010-01-01

Abstract:MgO-doped congruent and near-stoichiometric lithium tantalate single crystals were grown by Czochralski technique and flux method respectively. Optical absorption studies showed that the UV absorption edge was very sensitive to the composition of the crystals and the decrease in defects led to the blue-shift of the UV-edge. The unit domain shape also related to the composition, and the observed results of the crystal wafers that etched by hydrofluoric acid indicate that the domain structure of near-stoichiometric lithium tantalate is hexagonal. Domain movement characteristics in the room-temperature polarization process and the asymmetry between the domain walls of periodically poled lithium tantalate crystals are discussed in detail. Room-temperature polarization experiment of the grown crystal wafers with 1.8 mm thickness was carried out and periodical structures were obtained.
Role of Native Defects in Fe-Doped β-Ga2O3

Hui Zeng,Meng Wu,Haixia Gao,Yuansheng Wang,Hongfei Xu,Meijuan Cheng,Qiubao Lin

DOI: https://doi.org/10.3390/ma16206758

IF: 3.4

2023-10-19

Materials

Abstract:Iron impurities are believed to act as deep acceptors that can compensate for the n-type conductivity in as-grown Ga2O3, but several scientific issues, such as the site occupation of the Fe heteroatom and the complexes of Fe-doped β-Ga2O3 with native defects, are still lacking. In this paper, based on first-principle density functional theory calculations with the generalized gradient approximation approach, the controversy regarding the preferential Fe incorporation on the Ga site in the β-Ga2O3 crystal has been addressed, and our result demonstrates that Fe dopant is energetically favored on the octahedrally coordinated Ga site. The structural stabilities are confirmed by the formation energy calculations, the phonon dispersion relationships, and the strain-dependent analyses. The thermodynamic transition level Fe3+/Fe2+ is located at 0.52 eV below the conduction band minimum, which is consistent with Ingebrigtsen's theoretical conclusion, but slightly smaller than some experimental values between 0.78 eV and 1.2 eV. In order to provide direct guidance for material synthesis and property design in Fe-doped β-Ga2O3, the defect formation energies, charge transitional levels, and optical properties of the defective complexes with different kinds of native defects are investigated. Our results show that VGa and Oi can be easily formed for the Fe-doped β-Ga2O3 crystals under O-rich conditions, where the +3 charge state FeGaGai and −2 charge state FeGaOi are energetically favorable when the Fermi level approaches the valence and conduction band edges, respectively. Optical absorption shows that the complexes of FeGaGai and FeGaVGa can significantly enhance the optical absorption in the visible-infrared region, while the energy-loss function in the β-Ga2O3 material is almost negligible after the extra introduction of various intrinsic defects.

materials science, multidisciplinary,chemistry, physical,physics, applied, condensed matter,metallurgy & metallurgical engineering
Optical Properties of Trirutile Structure MgTa2O6 Single Crystals Grown by Optical Floating Zone Method

Litong Huang,Qiang Zhou,Fangfei Li,Liang Li

DOI: https://doi.org/10.1142/s0217984920502814

2020-01-01

Modern Physics Letters B

Abstract:[Formula: see text] single crystals with trirutile structure have been employed as research objects in this paper. The absorbance spectra of the [Formula: see text] crystals are presented and the optical bandgap structures of [Formula: see text] are discussed. Both room temperature and temperature-dependent photoluminescence (PL) of [Formula: see text] single crystals are investigated. Significantly, there are two processes in the emission, and the optical phonon participated procedures are observed and described.
Growth and characterization of Ta-doped Ga2O3 films deposited by magnetron sputtering

Yi Shang,Ke Tang,Zhuorui Chen,Zhiluo Zhang,Jie Deng,Yan Hu,Keyun Gu,Meng Cao,Linjun Wang,Jian Huang

DOI: https://doi.org/10.1016/j.mssp.2021.106040

IF: 4.1

2021-11-01

Materials Science in Semiconductor Processing

Abstract:In recent years, Ga2O3 has attracted extensive attention at home and abroad due to its excellent properties. In this paper, Ta-doped Ga2O3 films were grown on quartz substrates by magnetron sputtering technique. Effects of substrate temperature and seed layer on the performance of the films were investigated. The results showed that all films had uniform, smooth surface morphology and better transparency (>85%) in the wavelength region of 300–800 nm. Hall effect measurement revealed low resistivity of 0.089 Ω cm and high carrier concentration of 2.4 × 1019 cm−3 for the Ta-doped Ga2O3 film grown with seed layer. XPS spectra demonstrated that Ta was incorporated into the Ga2O3 films and Ta5+ ions were obtained.

engineering, electrical & electronic,materials science, multidisciplinary,physics, condensed matter, applied
Tungsten donors doping in β-gallium oxide single crystal

Baizhong Li,Hongji Qi,A. M. Ahmed,Qinglin Sai,Mingyan Pan,Changtai Xia,H. F. Mohamed

DOI: https://doi.org/10.1063/5.0220872

IF: 4

2024-09-09

Applied Physics Letters

Abstract:Crystal structure, Raman spectra, electrical properties, and photoluminescence of unintentionally doped (UID) and W-doped β-Ga2O3 (W:β-Ga2O3) crystals grown using the optical floating zone technique were investigated. Based on the experimental data, W6+ ions substitute Ga3+ ions mainly in the octahedral lattice site, as revealed by the Raman spectroscopic assessment of W:β-Ga2O3 crystals. The carrier concentration of 0.10 mol. % W:β-Ga2O3 (3.92 × 1018 cm3) is more than forty times that of UID crystal (9.55 × 1016 cm3). In addition, the resistivity and mobility of 0.10 mol. % W: β-Ga2O3 decreased from 0.603 to 0.032 Ω cm and 153.1 to 126 cm−2 V−1 s−1, respectively. The transmittance of W:β-Ga2O3 crystals decreases with increasing W content (0.01, 0.05, and 0.10 mol. %) but remains high in the visible wavelength range. Three distinct emissions are observed in the photoluminescence spectra: two blue emissions and a UV band emission. These bands are owing to the −1 charge states of Ga(I) vacancies (VGa1−) at the octahedral site, the −1 charge states of gallium and oxygen vacancy pairs (VGa + VO)1−, as well as the recombination of self-trapped holes (STHs) are confined between two O(II)-s sites, respectively.

physics, applied
Defect Formation in Gd3AlxGa5–xO12 (x = 1–3) and Gd3Al2Ga3O12:Ce Crystals

V. M. Kasimova,N. S. Kozlova,E. V. Zabelina,O. A. Buzanov,A. S. Bykov,E. A. Skryleva,D. A. Spassky

DOI: https://doi.org/10.1134/s0020168523080058

2024-02-06

Inorganic Materials

Abstract:We present results of a detailed study of defect formation processes and their effect on the optical properties of gadolinium aluminum gallium garnet crystals with partial aluminum substitution for gallium in the cation sublattice—Gd 3 Al 1 Ga 4 O 12 (Al : Ga = 1 : 4), Gd 3 Al 2 Ga 3 O 12 (Al : Ga = 2 : 3), and Gd 3 Al 3 Ga 2 O 12 (Al : Ga = 3 : 2) and cerium-doped crystals: Gd 3 Al 2 Ga 3 O 12 :Сe 3+ (GAGG:Ce). X-ray photoelectron spectroscopy and X-ray fluorescence analysis data demonstrate gallium deficiency relative to the stoichiometric composition in all of the crystals studied. The results obtained are used to analyze processes underlying the formation of structural growth point defects in gadolinium aluminum gallium garnet crystals. F -centers have been shown to be the predominant point defect species. We also have demonstrated the formation of Schottky defects and V -centers. The formation of additional F -centers in cerium-doped garnet crystals is happening. The refractive indices and attenuation coefficients of the crystals have been shown to depend on the Al : Ga ratio and doping with cerium.

materials science, multidisciplinary
Study on Electrical Defects Level in Single Layer Two-Dimensional Ta2o5

Dahai Li,Xiongfei Song,Linfeng Hu,Ziyi Wang,Rongjun Zhang,Liangyao Chen,David Wei Zhang,Peng Zhou

DOI: https://doi.org/10.1088/1674-1056/25/4/047304

2016-01-01

Chinese Physics B

Abstract:Two-dimensional atomic-layered material is a recent research focus, and single layer Ta2O5 used as gate dielectric in field-effect transistors is obtained via assemblies of Ta2O5 nanosheets. However, the electrical performance is seriously affected by electronic defects existing in Ta2O5. Therefore, spectroscopic ellipsometry is used to calculate the transition energies and corresponding probabilities for two different charged oxygen vacancies, whose existence is revealed by x-ray photoelectron spectroscopy analysis. Spectroscopic ellipsometry fitting also calculates the thickness of single layer Ta2O5, exhibiting good agreement with atomic force microscopy measurement. Nondestructive and noncontact spectroscopic ellipsometry is appropriate for detecting the electrical defects level of single layer Ta2O5.
Conduction mechanism and shallow donor defects in Nb-doped β-Ga2O3 single crystals

Qinglin Sai,Huiyuan Cui,Changtai Xia,Hongji Qi,Mingyan Pan,A. M. Ahmed,H. F. Mohamed

DOI: https://doi.org/10.1063/5.0200755

IF: 1.697

2024-04-01

AIP Advances

Abstract:Electrical properties, electronic defects, and photoluminescence (PL) of Nb-doped β-Ga2O3 crystals grown by the floating zone method have been studied in the temperature range from 10 to 350 K. The activation energies of shallow and deep traps were obtained and compared with their counterparts. The 0.25-Nb-doped Ga2O3 crystal has a metallic behavior at room temperature and a semiconducting behavior at low temperatures. This behavior was interpreted by the quantum corrections to the electrical resistivity resulting from the weak localization and Coulomb interaction. In addition, the 0.25-Nb-doped Ga2O3 crystal has a shallow donor ionization energy of 0.03 eV, indicating that it requires less energy to enable n-type conductivity. Hence, Nb is a good choice for improving the electrical conductivity of the β-Ga2O3 crystal. Three defect trap states were found at EC-0.81 eV, EC-0.49 eV, and EC-0.12 eV below the conduction band edge. The PL spectra of the undoped sample show two characteristic bands in the UV and blue regions under the excitation wavelength of 256 nm. On the other hand, in the Nb-doped β-Ga2O3 sample, a novel UV emission band with a shorter wavelength was observed.

materials science, multidisciplinary,physics, applied,nanoscience & nanotechnology
First‐Principles Study on the Effects of Ta Doping and Point Defects of Hi and VO on the Photoelectric Properties of β‐Ga2O3

Xin‐Ya Yang,Shu‐Min Wen,Ding‐Du Chen,Xia Liu,Er‐Jun Zhao

DOI: https://doi.org/10.1002/pssb.202300461

2023-12-14

physica status solidi (b) - basic solid state physics

Abstract:The photoelectric properties of Ta‐doped β‐Ga2O3 with interstitial H and O vacancies are studied. The main absorption wavelengths of all systems are in the wavelength range of less than 300 nm. Therefore, Ta‐doped β‐Ga2O3 has an ultraviolet detection ability. The introduction of Ta is beneficial to improve the conductivity of the system. Interstitial H can improve the conductivity of the system. Herein, the photoelectric properties of Ta‐doped β‐Ga2O3 are studied based on first‐principles density functional theory calculation. The effects of interstitial H and O vacancies on the properties of the system are also considered. The electronic structure, dielectric function, absorption spectrum, mobility, and conductivity of all the systems are studied and analyzed. The results show that Ta‐doped β‐Ga2O3 is an n‐type direct‐bandgap semiconductor. With the increase in Ta doping concentration, the dielectric constant, polarization ability, and charge binding ability of the system gradually increase, the bandgap gradually narrows, and the absorption spectra of systems redshift. The main absorption wavelengths of all systems are in the wavelength range of less than 300 nm. Therefore, Ta‐doped β‐Ga2O3 has an ultraviolet detection ability. The introduction of Ta is beneficial to improve the conductivity of the system. Interstitial H can improve the conductivity of the system.
Defects Study of MOCVD Grown Β-Ga2o3films

Parvaneh Ravadgar,Ray-Hua Horng,Li-Wei Tu,Sing-Liang Ou,Hui-Ping Pan,Shu-De Yao

DOI: https://doi.org/10.1117/12.2002913

2013-01-01

Abstract:Highly (-201) oriented beta-Ga2O3 films prepared by metal-organic chemical vapor deposition on (0001) sapphire substrates, undergone different post annealing temperatures to study their resistivity under harsh environment. Both of Rutherford backscattering spectrometry and cross-sectional transmission electron microscopy (TEM) results are exposing a harmony between oxygen vacancies and gallium interstitials. TEM characterization of samples determines a relationship between interstitials and formation of screw dislocations. Cathodoluminecsnece investigated under different applied voltages is found to be applicable to study chemistry of the bulk and surface of beta-Ga2O3.
Crystal Growth, Optical and Scintillation Properties of Nd3+ Doped GdTaO4 Single Crystal

Fang Peng,Wenpeng Liu,Qingli Zhang,Huajun Yang,Chaoshu Shi,Rihua Mao,Dunlu Sun,Jianqiao Luo,Guihua Sun

DOI: https://doi.org/10.1016/j.jcrysgro.2014.08.010

IF: 1.8

2014-01-01

Journal of Crystal Growth

Abstract:A new Nd3+ doped GdTaO4 crystal (having density of 8.83gcm−3) was successfully grown by the Czochralski method. The as-grown crystal was with dimension of Φ30mm×50mm. The structure parameters were refined by Rietveld method to X-ray powder diffraction. The photoluminescence spectra including emission, excitation and decay curves were measured. The photoluminescence decay times were determined to be 20.7ns (7.73%) and 496ns (92.27%) monitored at 417nm, and 463ns monitored at 453nm, respectively. In addition, the radioluminescence spectrum was given and discussed. The scintillation decay constants were 46.4ns (48%) and 1199.7ns (52%). Compared with GdTaO4, the scintillation decay of Nd:GdTaO4 was faster and the percent of the fast component was remarkably increased. Besides, the light yield of Nd:GdTaO4 can be estimated to be equal to that of GdTaO4. All these results suggest that the Nd:GdTaO4 crystal can be expected as a potential heavy and fast scintillator.
Ti- and Fe-related charge transition levels in β − Ga 2 O 3

Christian Zimmermann,Ymir Kalmann Frodason,Abraham Willem Barnard,Joel Basile Varley,Klaus Irmscher,Zbigniew Galazka,Antti Karjalainen,Walter Ernst Meyer,Francois Danie Auret,Lasse Vines

DOI: https://doi.org/10.1063/1.5139402

IF: 4

2020-02-18

Applied Physics Letters

Abstract:Deep-level transient spectroscopy measurements on β- Ga 2 O 3 crystals reveal the presence of three defect signatures labeled E 2 a , E 2 b, and E 3 with activation energies at around 0.66 eV, 0.73 eV, and 0.95 eV below the conduction band edge. Using secondary ion mass spectrometry, a correlation between the defect concentration associated with E 3 and the Ti concentration present in the samples was found. Particularly, it is found that E 3 is the dominant Ti-related defect in β- Ga 2 O 3 and is associated with a single Ti atom. This finding is further corroborated by hybrid functional calculations that predict Ti substituting on an octahedral Ga site, denoted as Ti GaII, to be a good candidate for E 3. Moreover, the deep level transient spectroscopy results show that the level previously labeled E 2 and attributed to Fe substituting on a gallium site ( Fe Ga) consists of two overlapping signatures labeled E 2 a and E 2 b. We tentatively assign E 2 a and E 2 b to Fe substituting for Ga on a tetrahedral or an octahedral site, respectively.

physics, applied
Effects of Ta concentration on microstructure, optical and optoelectronic properties of Ga2O3:Ta films

Xue Meng,Jinxiang Deng,Ruidong Li,Qing Zhang,Kun Tian,Jiawei Xu,Xiaolei Yang,Lingjia Meng,Juan Du,Guisheng Wang

DOI: https://doi.org/10.1016/j.vacuum.2024.113142

IF: 4

2024-06-01

Vacuum

Abstract:Ga2O3 material possesses extensive application potential and research value. Doping other elements into intrinsic Ga2O3 is one of the common methods to enhance its performance and is also a hot research direction nowadays. In this paper, Ta element was introduced into Ga2O3 material, and Ga2O3:Ta thin films with different Ta doping concentrations were fabricated using a dual-target RF co-sputtering system. The effects of Ta doping concentration on microstructure, optical, and optoelectronic properties of the films were meticulously investigated, and the optimal Ta doping concentration was determined. XPS results reveal that Ta entered Ga2O3 lattice with a +5 oxidation state, and combined with EDS results, it is inferred that Ta successfully partially substitutes Ga. XRD and XPS results indicate that when the sputtering power of Ta2O5 is 30 W, corresponding to a Ta doping concentration of 2.39 at.%, the film exhibits enhanced crystallinity. The Ga2O3-based MSM detector prepared under this condition demonstrates superior stability and detection sensitivity. Additionally, it also exhibits stable photoresponse to 365 nm light. This work promotes the application of Ga2O3 material and provides new insights into improving the stability and performance of ultraviolet photodetectors.

materials science, multidisciplinary,physics, applied
Structural Analysis and Crystal-Field Calculations of Nd 3+ in Gd X Lu 1− X TaO 4 ( X = 0.85) Polycrystalline

Jin-Yun Gao,Qing-Li Zhang,Hua-Jun Yang,Peng-Yu Zhou,Dun-Lu Sun,Shao-Tang Yin,Ye He

DOI: https://doi.org/10.1088/1674-1056/21/10/106103

2012-01-01

Chinese Physics B

Abstract:The crystal structural parameters of Nd3+-doped rare earth orthotantalate GdxLu1?xTaO4 (x = 0.85) are determined by applying the Rietveld refinement to its X-ray diffraction, and its emission and excitation spectra at 77 K are analysed. The relativistic model of ab initio self-consistent DV-X? method, which is applied to the cluster NdO8 in GdxLu1?xTaO4, and the effective Hamiltonian model are used to investigate its spin?orbit and crystal-field parameters. The free-ions and crystal-field parameters are fitted to the experimental energy levels at 77 K with a root-mean-square deviation of 14.92 cm?1. According to the crystal-field calculations, 96 levels of Nd3+ are assigned. Finally, the fitting results of free-ions and crystal-field parameters are compared with those already reported for Nd3+:YAlO3. The results indicate that the free-ion parameters are similar to those of the Nd3+ in GdxLu1?xTaO4 and YAlO3 hosts, and the crystal-field interaction of Nd3+ in GdxLu1?xTaO4 is stronger than that in YAlO3.
Preparation and Characterization of Tantalum-Doped Indium Tin Oxide Films Deposited by Magnetron Sputtering

Bo Zhang,Xianping Dong,Xiaofeng Xu,Jiansheng Wu

DOI: https://doi.org/10.1016/j.scriptamat.2007.09.028

IF: 6.302

2008-01-01

Scripta Materialia

Abstract:Tantalum-doped indium tin oxide films were deposited by co-sputtering with two-targets. Tantalum-doping strengthened the orientation of the (400) plane and resulted in better crystalline structure, larger grain size and lower surface roughness. Tantalum-doping also revealed better optical-electrical properties and a larger optical band gap. Carrier concentration was increased by tantalum-doping, which had an important influence on optical-electrical properties. (c) 2007 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Characterization of defect levels in β-Ga 2 O 3 single crystals doped with tantalum

Tuning Electrical Conductivity of Β-Ga2o3 Single Crystals by Ta Doping

An Optical Spectroscopy Study of Defects in Lithium Tantalate Single Crystals

Tuning of Electrical and Optical Properties of Tantalum Doped TiO2 Flims Prepared by Sol-gel Method

Defect energy levels in monoclinic β-Ga2O3

Epitaxial tantalum‐doped β‐Ga2O3 thin films grown on MgO (001) substrate by pulsed laser deposition

Research on Defects and Domain Characteristics of MgO-doped Near-Stoichiometric Lithium Tantalate in Room-Temperature Polarization Process

Role of Native Defects in Fe-Doped β-Ga2O3

Optical Properties of Trirutile Structure MgTa2O6 Single Crystals Grown by Optical Floating Zone Method

Growth and characterization of Ta-doped Ga2O3 films deposited by magnetron sputtering

Tungsten donors doping in β-gallium oxide single crystal

Defect Formation in Gd3AlxGa5–xO12 (x = 1–3) and Gd3Al2Ga3O12:Ce Crystals

Study on Electrical Defects Level in Single Layer Two-Dimensional Ta2o5

Conduction mechanism and shallow donor defects in Nb-doped β-Ga2O3 single crystals

First‐Principles Study on the Effects of Ta Doping and Point Defects of Hi and VO on the Photoelectric Properties of β‐Ga2O3

Defects Study of MOCVD Grown Β-Ga2o3films

Crystal Growth, Optical and Scintillation Properties of Nd3+ Doped GdTaO4 Single Crystal

Ti- and Fe-related charge transition levels in β − Ga 2 O 3

Effects of Ta concentration on microstructure, optical and optoelectronic properties of Ga2O3:Ta films

Structural Analysis and Crystal-Field Calculations of Nd 3+ in Gd X Lu 1− X TaO 4 ( X = 0.85) Polycrystalline

Preparation and Characterization of Tantalum-Doped Indium Tin Oxide Films Deposited by Magnetron Sputtering