Abstract:In this paper, the characteristics of oxygen vacancies (VO) and gallium vacancies (VGa) in β-Ga2O3 are studied using density functional theory. The performed relaxation analysis indicates that the relaxation of VGaII increases its octahedral volume. Compared with the tetrahedron, the Ga atom of the octahedron surrounding VO is more stable. The formation energy results suggest also that VGa 0 is expected to be most favorable in p-type β-Ga2O3, while VGa -3 is preferred in the n-type. The −3 charge state acts as a compensating acceptor, which reduces electron conductivity. VO+2, which acts as the compensation donor center, can easily form in p-type β-Ga2O3, while the VO0 forms readily in n-type β-Ga2O3. VGa at high density can exist in β-Ga2O3 in an oxygen-rich environment, while VO can exist under oxygen-poor conditions. The defect charge-state transition level reveals that VGa is a deep acceptor and VO is a deep donor. For VGa, the transition levels ε (0/-1), ε (-2/-1), and ε (-3/-2) can appear in the thermodynamic equilibrium system. However, for VOI and VOIII, which are used as negative-U centers, only the transition level ε (2+/0) can appear in thermodynamic equilibrium. Furthermore, the calculated bandgap properties indicate that VGa is capable of introducing ferromagnetism in β-Ga2O3, while VO cannot. VGa introduces both acceptor levels and donor levels within the bandgap, which compensate each other, and they, thus, determine the acceptor characteristics of the system. The appearance of VO-introduced donor levels into the bandgap increases the overall electron concentration of the system. A Bader charge analysis shows that the vacancy defect can have a strong effect on the charge distribution of the crystal and alter the electronic characteristics of the crystal. The research results in this paper show that the electronic and magnetic properties of β-Ga2O3 can be changed significantly by introducing different types of vacancy defects with different charge states during the preparation process of the device. This can be done to meet specific performance requirements of a commercial electronic component.

Defects Study of MOCVD Grown Β-Ga2o3films

Defects in GaN Films Studied by Positron Annihilation Spectroscopy

Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD

The Anisotropy of Deformation Behaviors in (100) and (010) Plane of Monoclinic Β-Ga2o3 Single Crystals

A TEM Study of MOCVD-Grown Rutile GeO2 Films

Planar defects in α -Ga2O3 thin films produced by HVPE

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

Study of InGaN Films Grown by MOCVD

Microstructural analysis of heteroepitaxial -Ga<sub>2</sub>O<sub>3</sub> films grown on (0001) sapphire by halide vapor phase epitaxy

The effect of vacancy defects on the electronic properties of β-Ga2O3

Deep-level Defects in Gallium Oxide

Oxygen annealing induced changes in defects within beta-Ga2O3 epitaxial films measured using photoluminescence

Deformation and fracture behaviors of monocrystalline β-Ga 2 O 3 characterized using indentation method and first-principles calculations

(Digital Presentation) MOCVD Growth of Ga2O3, Algao and Heterostructures

The Effect of a Nucleation Layer on Morphology and Grain Size in MOCVD-Grown β-Ga2O3 Thin Films on C-Plane Sapphire

Anisotropic Defect Structure of GaN Film Grown by MOCVD

Investigation of the surface band structure and the evolution of defects in β-(AlxGa1−x)2O3

Native defect association in beta-Ga2O3 enables room-temperature p-type conductivity

Al Coordination and Ga Interstitial Stability in a β-(Al0.2Ga0.8)2O3 Thin Film

Orientation-dependent atomic-scale mechanism and defect evolution in β-Ga2O3 thin film epitaxial growth

Orientation-dependent surface radiation damage in $β$-Ga2O3 explored by multiscale atomic simulations