Planar defects in α -Ga2O3 thin films produced by HVPE

A. V. Myasoedov,I. S. Pavlov,A. I. Pechnikov,S. I. Stepanov,V. I. Nikolaev

DOI: https://doi.org/10.1063/5.0189133

IF: 2.877

2024-03-26

Journal of Applied Physics

Abstract:The defect structure of α-phase gallium oxide thin films was investigated using transmission electron microscopy (TEM). Epitaxial Ga2O3 films were grown via halide vapor-phase epitaxy on c-plane sapphire substrates. TEM analysis revealed a high density of extended planar defects within the films, primarily located along prismatic planes of {112 ̄0} type. Displacement vectors were determined using the invisibility criterion for stacking faults. The study encompassed both planar and cross-sectional views of the films. It is hypothesized that these defects form due to the motion of edge partial dislocations with the 13⟨11 ̄00⟩ Burgers vector. Various mechanisms of their formation have been explored.

physics, applied

What problem does this paper attempt to address?

The paper primarily investigates the issue of planar defects in α-Ga₂O₃ (α-gallium oxide) thin films. The authors conducted a detailed analysis of α-Ga₂O₃ thin films grown on sapphire substrates using halide vapor phase epitaxy (HVPE) through transmission electron microscopy (TEM) techniques.

Main findings include:
1. **Existence of planar defects**: The study revealed a high density of planar defects in the α-Ga₂O₃ thin films, primarily located on {11̅22̅20} type prismatic planes.
2. **Types of defects**: TEM analysis determined that these planar defects are formed by the movement of partial dislocations, which have a Burgers vector of 1/3[11̅22̅10].
3. **Stress release mechanism**: Due to the lattice mismatch between the α-Ga₂O₃ thin films and the sapphire substrates, the films are subjected to compressive stress. These planar defects may be involved in the stress relaxation process.
4. **Dislocation characteristics**: In addition to planar defects, threading dislocations are also present in the films, most of which are considered to be pure edge dislocations with a Burgers vector of 1/3[11̅22̅10].

In summary, this study aims to gain a deeper understanding of the defect structure in α-Ga₂O₃ thin films and to explore how these defects affect material performance and their role in stress relaxation. This is crucial for optimizing the quality of α-Ga₂O₃ thin films and improving their performance in applications such as power electronic devices.