Abstract:In this paper, the characteristics of oxygen vacancies (VO) and gallium vacancies (VGa) in β-Ga2O3 are studied using density functional theory. The performed relaxation analysis indicates that the relaxation of VGaII increases its octahedral volume. Compared with the tetrahedron, the Ga atom of the octahedron surrounding VO is more stable. The formation energy results suggest also that VGa 0 is expected to be most favorable in p-type β-Ga2O3, while VGa -3 is preferred in the n-type. The −3 charge state acts as a compensating acceptor, which reduces electron conductivity. VO+2, which acts as the compensation donor center, can easily form in p-type β-Ga2O3, while the VO0 forms readily in n-type β-Ga2O3. VGa at high density can exist in β-Ga2O3 in an oxygen-rich environment, while VO can exist under oxygen-poor conditions. The defect charge-state transition level reveals that VGa is a deep acceptor and VO is a deep donor. For VGa, the transition levels ε (0/-1), ε (-2/-1), and ε (-3/-2) can appear in the thermodynamic equilibrium system. However, for VOI and VOIII, which are used as negative-U centers, only the transition level ε (2+/0) can appear in thermodynamic equilibrium. Furthermore, the calculated bandgap properties indicate that VGa is capable of introducing ferromagnetism in β-Ga2O3, while VO cannot. VGa introduces both acceptor levels and donor levels within the bandgap, which compensate each other, and they, thus, determine the acceptor characteristics of the system. The appearance of VO-introduced donor levels into the bandgap increases the overall electron concentration of the system. A Bader charge analysis shows that the vacancy defect can have a strong effect on the charge distribution of the crystal and alter the electronic characteristics of the crystal. The research results in this paper show that the electronic and magnetic properties of β-Ga2O3 can be changed significantly by introducing different types of vacancy defects with different charge states during the preparation process of the device. This can be done to meet specific performance requirements of a commercial electronic component.

The effect of vacancy defects on the electronic properties of β-Ga2O3

Vacancy Defects in Ga2O3: First-Principles Calculations of Electronic Structure

Effects of oxygen vacancies on the structural and optical properties of β-Ga2O3

First-principles Study of Ga-vacancy Induced Magnetism in Β-Ga2o3

Ab Initio Study of A Charged Vacancy in Yttrium Aluminum Garnet (Y3al5o12)

How do the oxygen vacancies affect the photoexcited carriers dynamics in β-Ga2O3?

First‐principles investigation of the influence of point defect on the electronic and optical properties of α‐Ga2O3

Modulation of Electronic and Optical Properties by Surface Vacancies in Low-Dimensional Β-Ga2o3

Electronic structure of oxygen-vacancy defects in amorphous In-Ga-Zn-O semiconductors

Effects of Carbon Related Defects on Opto-Electronic Properties of Β-Ga2o3: the First Principle Calculation

Defect energy levels in monoclinic β-Ga2O3

Reduction of Vacancy Defects Induced by Thermal Annealing in Β-Ga2o3 Epilayer

Influence of vacation defects and element doping on the optical properties and electronic structure of Bi12GeO20 semiconductor

First‐Principles Calculations of Electronic Structure and Optical Properties of Si‐Doped and Vacancy Β‐ga2o3

Library of intrinsic defects in β-Ga2O3: First-principles studies

First‐Principles Study on the Effects of Ta Doping and Point Defects of Hi and VO on the Photoelectric Properties of β‐Ga2O3

Role of Native Defects in Fe-Doped β-Ga2O3

First-principles study on the effects of Zr doping and interstitial H and O vacancy on the optoelectronic properties of [math]-Ga2O3

Effect of Vacancy Defects on the Electronic Structure and Optical Properties of Bi4O5Br2: First-Principles Calculations

Interaction Between Hydrogen and Gallium Vacancies in Β-Ga2o3

Perspective on atomic scale investigation of point and extended defects in gallium oxide