Abstract:Ultrawide bandgap (UWBG) gallium oxide (Ga2O3) represents an emerging semiconductor material with excellent chemical and thermal stability. It has a band gap of 4.5-4.9 eV, much wider than that of the GaN (3.4 eV) and 4H-SiC (3.2 eV). The monoclinic β-phase Ga2O3 represents the thermodynamically stable crystal among the known five known phases (α, β, γ, d, ε/κ). The breakdown field of β-Ga2O3 is predicted to be 6-8 MV/cm, which is much larger than that of the 4H-SiC and GaN. These unique properties make β-Ga2O3 a promising candidate for high power electronic device and solar blind photodetector applications. Single crystal β-Ga2O3 substrates can be synthesized by scalable and low cost melting based growth techniques. Metalorganic chemical vapor deposition (MOCVD) growth technique was demonstrated to produce high quality β-Ga2O3 thin films and its ternary (AlxGa1-x)2O3 alloys. Control of background and n-type doping in β-Ga2O3 will be discussed. Record carrier mobilities of 194 cm2/V·s at room temperature and ~10,000 cm2/V·s at low temperature were measured for MOCVD β-Ga2O3 thin films. Growth and fundamental understanding of β-(AlxGa1-x)2O3 are still limited. The incorporation of Al in beta-phase Ga2O3 has not been well understood, although it was predicted up to 60% of Al composition could be incorporated into β-Ga2O3. MOCVD growth of β-AlGaO targeting for Al composition of > 40% will be discussed. N-type doping capability as a function of Al composition in (AlxGa1-x)2O3 is another important fundamental question. Charge carrier transport properties in (AlxGa1-x)2O3 will be discussed. In addition, MOCVD growth of different phases of Ga2O3 and AlGaO will be presented. Acknowledgement: The authors acknowledge the funding support from the Air Force Office of Scientific Research FA9550-18-1-0479 (AFOSR, Dr. Ali Sayir) and the National Science Foundation (1810041, 2019753, 1755479).

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

MOCVD Epitaxy of α-(AlxGa1−x)2O3 (x =0–100%) on m-Plane Sapphire Substrate

Metalorganic Chemical Vapor Deposition of \b{eta}-(AlxGa1-x)2O3 thin films on (001) \b{eta}-Ga2O3 substrates

Exploring Heteroepitaxial Growth and Electrical Properties of Α-Ga2o3 Films on Differently Oriented Sapphire Substrates

Surface/structural characteristics and band alignments of thin Ga2O3 films grown on sapphire by pulse laser deposition

Growth and characterization of -Ga<sub>2</sub>O<sub>3</sub> thin films grown on off-angled Al<sub>2</sub>O<sub>3</sub> substrates by metal-organic chemical vapor deposition

Growth and characterization of β-Ga<sub>2</sub>O<sub>3</sub> thin films grown on off-angled Al<sub>2</sub>O<sub>3</sub> substrates by metal-organic chemical vapor deposition

Research on the crystal phase and orientation of Ga2O3 Hetero-epitaxial film

Growth, catalysis and faceting of $α$-Ga$_2$O$_3$ and $α$-(In$_x$Ga$_{1-x}$)$_2$O$_3$ on $m$-plane $α$-Al$_2$O$_3$ by molecular beam epitaxy

Phase-selective growth of $κ$- vs $β$-Ga$_2$O$_3$ and (In$_x$Ga$_{1-x}$)$_2$O$_3$ by In-mediated metal exchange catalysis in plasma-assisted molecular beam epitaxy

Metalorganic Vapor-Phase Epitaxy of Β-(Alxga1-x)2o3 on (201) Ga2O3 Substrates

Heteroepitaxial Growth of Thickα-Ga2o3film on Sapphire (0001) by MIST-CVD Technique

Growth and characteristics of β-Ga2O3 thin films on sapphire (0001) by low pressure chemical vapour deposition

ε-Ga 2 O 3 Grown on c -Plane Sapphire by MOCVD with a Multistep Growth Process

Growth, catalysis, and faceting of α-Ga2O3 and α-(In x Ga1− x )2O3 on m -plane α-Al2O3 by molecular beam epitaxy

(Digital Presentation) MOCVD Growth of Ga2O3, Algao and Heterostructures

Microstructural Analysis of Heteroepitaxial Β-Ga2o3 Films Grown on (0001) Sapphire by Halide Vapor Phase Epitaxy

Investigation of Β‐ga2o3 Film Growth Mechanism on C‐plane Sapphire Substrate by Ozone Molecular Beam Epitaxy

Structural and Optical Properties of Α-Ga2o3 Films Deposited on Sapphire (10‾10) and (01‾12) Substrate by MOCVD

Low Temperature Deposition of Ga2O3 Films on Sapphire and Epi-Gan Substrates

(001) Β-Ga2o3 Homoepitaxial Layer Grown with In-Situ Pulsed Al Atom Assisted Method by MOCVD