Abstract:In this work, we investigated the epitaxial growth of (010) β-Ga2O3 and β-(Al x Ga1–x )2O3 films using metalorganic chemical vapor deposition (MOCVD) with trimethylgallium (TMGa) as the precursor, aiming for high growth rates for thick films. We observed pyramid-shaped defects in the β-Ga2O3 epitaxial films, characterized by polygon-shaped bumps and inverted pyramids embedded in the epi-films. To improve the surface morphology and suppress the defects formation, we developed a novel approach that incorporates a small amount of aluminum (Al) during the growth process. This addition led to significant improvements in surface morphology and reductions in both the density and size of defects for the low-Al β-(Al x Ga1–x )2O3 films, with a growth rate of 5.5 μm/h. Our findings demonstrate the effectiveness of this approach in optimizing the surface morphology of thick β-(Al x Ga1–x )2O3 films with rapid growth rates. We achieved the best surface for β-(Al x Ga1–x )2O3 in an 11 μm-thick film with approximately 2% Al composition, grown at a rate of 5.5 μm/h. However, we also observed that defect density and size increase with film thickness. Room temperature Hall measurements were used to characterize the electrical properties of the low-Al β-(Al x Ga1–x )2O3 films, which revealed a decrease in Si incorporation efficiency and room temperature mobility with increasing Al composition. Results indicated that increasing the chamber pressure led to a decrease in both growth rate and Al composition at a constant [TMAl]/[TMGa + TMAl] molar flow rate ratio. The β-(Al x Ga1–x )2O3 films (∼11 μm) with optimal surface quality were grown at chamber pressures between 60 and 100 torr. This work demonstrates the feasibility of growing (010) low-Al β-(Al x Ga1–x )2O3 thick films with high growth rates and minimal surface defects using MOCVD. Our findings provide valuable insights into β-(Al)GaO growth and suggest that introducing Al is an effective strategy for improving the surface morphology of β-(Al)GaO films. These results have important implications for the development of high-performance (Al)GaO-based vertical power devices.

Growth and characterization of -Ga<sub>2</sub>O<sub>3</sub> thin films grown on off-angled Al<sub>2</sub>O<sub>3</sub> substrates by metal-organic chemical vapor deposition

Growth and characterization of β-Ga<sub>2</sub>O<sub>3</sub> thin films grown on off-angled Al<sub>2</sub>O<sub>3</sub> substrates by metal-organic chemical vapor deposition

Heterogrowth of -(Al<i><sub>x</sub></i>Ga<sub>1-<i>x</i></sub>)<sub>2</sub>O<sub>3</sub > Thin Films on Sapphire Substrates

Heterogrowth of beta-(AlxGa1-x)(2)O-3 Thin Films on Sapphire Substrates

Investigation on the -Ga<sub>2</sub>O<sub>3</sub> deposited on off-angled sapphire (0001) substrates

((3)over-bar10)-Oriented -Ga<sub>2</sub>O<sub>3</sub> grown on (0001) sapphire by halide vapor phase epitaxy: growth and structural characterizations

Characterization of Β-Ga2o3 Thin Films on Sapphire (0001) Using Metal-Organic Chemical Vapor Deposition Technique

Heteroepitaxial growth of -Ga<sub>2</sub>O<sub>3</sub> thin films on c-plane sapphire substrates with -(Al<sub>x</sub>Ga<sub>1-x</sub>)<sub>2</sub>O<sub>3</sub> intermediate buffer layer by mist-CVD method

Metalorganic Vapor-Phase Epitaxy of Β-(Alxga1-x)2o3 on (201) Ga2O3 Substrates

Single Crystalline Β-Ga2o3 Homoepitaxial Films Grown by MOCVD

Β-Ga2o3 Thin Film Grown on Sapphire Substrate by Plasma-Assisted Molecular Beam Epitaxy

MOCVD Growth of Thick β-(Al)GaO Films with Fast Growth Rates

Study of β-Ga2O3 films hetero-epitaxially grown on off-angled sapphire substrates by halide vapor phase epitaxy

The Heteroepitaxy of Thick β-Ga2O3 Film on Sapphire Substrate with a β-(AlxGa1-x)2O3 Intermediate Buffer Layer

Chemical, Optical, and Electrical Characterization of Ga2O3 Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

Surface/structural characteristics and band alignments of thin Ga2O3 films grown on sapphire by pulse laser deposition

Structural and optical properties of α-Ga2O3 films deposited on sapphire (1010) and (0112) substrate by MOCVD

(-310)-oriented β-Ga2O3 grown on (0001) sapphire by halide vapor phase epitaxy: growth and structural characterizations

Preparation of High Al Content (alxga1−x)2o3 Films by Low-Pressure Reactive Vapor Deposition on Sapphire Substrates

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

Investigation of the surface optimization of -Ga<sub>2</sub>O<sub>3</sub> films assisted deposition by pulsed MOCVD