Abstract:In this work, we investigated the epitaxial growth of (010) β-Ga2O3 and β-(Al x Ga1–x )2O3 films using metalorganic chemical vapor deposition (MOCVD) with trimethylgallium (TMGa) as the precursor, aiming for high growth rates for thick films. We observed pyramid-shaped defects in the β-Ga2O3 epitaxial films, characterized by polygon-shaped bumps and inverted pyramids embedded in the epi-films. To improve the surface morphology and suppress the defects formation, we developed a novel approach that incorporates a small amount of aluminum (Al) during the growth process. This addition led to significant improvements in surface morphology and reductions in both the density and size of defects for the low-Al β-(Al x Ga1–x )2O3 films, with a growth rate of 5.5 μm/h. Our findings demonstrate the effectiveness of this approach in optimizing the surface morphology of thick β-(Al x Ga1–x )2O3 films with rapid growth rates. We achieved the best surface for β-(Al x Ga1–x )2O3 in an 11 μm-thick film with approximately 2% Al composition, grown at a rate of 5.5 μm/h. However, we also observed that defect density and size increase with film thickness. Room temperature Hall measurements were used to characterize the electrical properties of the low-Al β-(Al x Ga1–x )2O3 films, which revealed a decrease in Si incorporation efficiency and room temperature mobility with increasing Al composition. Results indicated that increasing the chamber pressure led to a decrease in both growth rate and Al composition at a constant [TMAl]/[TMGa + TMAl] molar flow rate ratio. The β-(Al x Ga1–x )2O3 films (∼11 μm) with optimal surface quality were grown at chamber pressures between 60 and 100 torr. This work demonstrates the feasibility of growing (010) low-Al β-(Al x Ga1–x )2O3 thick films with high growth rates and minimal surface defects using MOCVD. Our findings provide valuable insights into β-(Al)GaO growth and suggest that introducing Al is an effective strategy for improving the surface morphology of β-(Al)GaO films. These results have important implications for the development of high-performance (Al)GaO-based vertical power devices.

Investigation of the surface optimization of -Ga<sub>2</sub>O<sub>3</sub> films assisted deposition by pulsed MOCVD

Influence of Oxygen on Ga2O3 Deposition at Low Temperature by MOCVD

Growth and characterization of -Ga<sub>2</sub>O<sub>3</sub> thin films grown on off-angled Al<sub>2</sub>O<sub>3</sub> substrates by metal-organic chemical vapor deposition

Research on the Surface Morphology of SS-Ga2o3films with Different Growth Conditions

MOCVD Growth of Thick β-(Al)GaO Films with Fast Growth Rates

Growth and characterization of β-Ga<sub>2</sub>O<sub>3</sub> thin films grown on off-angled Al<sub>2</sub>O<sub>3</sub> substrates by metal-organic chemical vapor deposition

Chemical, Optical, and Electrical Characterization of Ga2O3 Thin Films Grown by Plasma-Enhanced Atomic Layer Deposition

Surface chemical composition and HRTEM analysis of heteroepitaxial β-Ga2O3 films grown by MOCVD

(001) Β-Ga2o3 Homoepitaxial Layer Grown with In-Situ Pulsed Al Atom Assisted Method by MOCVD

Growth rate control and phase diagram of wafer-scale Ga2O3 films by MOCVD

Atomically control of surface morphology in Ga2O3 epi-layers with high doping activation ratio

Investigation on the -Ga<sub>2</sub>O<sub>3</sub> deposited on off-angled sapphire (0001) substrates

Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model

Low Temperature Deposition of Ga2O3 Films on Sapphire and Epi-Gan Substrates

MOCVD growth and band offsets of \k{appa}-phase Ga2O3 on sapphire, GaN, AlN and YSZ substrates

Influence of O2 Pulse on the Β-Ga2o3 Films Deposited by Pulsed MOCVD

Investigation of Β-Ga 2 O 3 Films and Β-Ga 2 O 3 /gan Heterostructures Grown by Metal Organic Chemical Vapor Deposition

Metalorganic Vapor-Phase Epitaxy of Β-(Alxga1-x)2o3 on (201) Ga2O3 Substrates

Enhancing the quality of homoepitaxial ( − 201) β-Ga2O3 thin film by MOCVD with in situ pulsed indium

Investigation of β-Ga2O3 thin films grown on epi-GaN/sapphire(0001) substrates by low pressure MOCVD

Optimization of Heteroepitaxial Gallium Oxide Thin Films on Diamond Composite Substrates using Pulsed Laser Deposition Method