Atomically control of surface morphology in Ga2O3 epi-layers with high doping activation ratio

Dangpo Wang,Jianing Li,Anning Jiao,Xinchuang Zhang,Xiaoli Lu,Xiaohua Ma,Yue Hao
DOI: https://doi.org/10.1016/j.jallcom.2020.157296
IF: 6.2
2021-02-01
Journal of Alloys and Compounds
Abstract:In this study, a two-step surface treatment process combined with pulsed laser deposition (PLD) was developed for obtaining high quality Ga2O3 epi-layers with atomic flat interface and effectively activated dopants. The results showed that semi-insulating Fe-doped Ga2O3 thin film with terraced atomic steps was successfully obtained via the PLD for the first time. The carrier concentration down to 4.39 × 107 cm−3 and square resistance up to 2.26 × 1011 Ω/□ made it comparable to commercial Fe-doped single crystals. Another Sn-doped epi-layer with terraced atomic steps was then deposited on the Fe-doped layer, exhibiting a carrier concentration of 2.01 × 1020 cm−3 and an Sn activating ratio of 41.1%, which broke the bottleneck of low activating ratio in metal organic vapor-phase epitaxy or molecular beam epitaxy. These results demonstrate a simple method to get atomically flat interfaces and tunable charge carriers in Ga2O3 epi-growth and provide a potential material basis for Ga2O3 high electron mobility transistor.
materials science, multidisciplinary,chemistry, physical,metallurgy & metallurgical engineering
What problem does this paper attempt to address?
The key problem that this paper attempts to solve is how to obtain high - quality Ga₂O₃ epitaxial layers through atomic - level control of surface topography and high doping activation ratio. Specifically, the researchers developed a method combining pulsed - laser deposition (PLD) and a two - step surface treatment process to achieve: 1. **Atomically flat interface**: Ensure that the epitaxial layer has extremely high surface flatness, which is crucial for the formation of high - quality heterostructures. 2. **Effective activation of dopants**: Improve the activation efficiency of doping elements (such as Fe and Sn), thereby significantly enhancing the electrical properties. ### Specific problems and solutions #### 1. Increase carrier concentration and mobility In Ga₂O₃ materials, low carrier concentration and mobility are a key problem. The theoretically intrinsic electron mobility is approximately 300 cm²/(V·s), but the actual experimental values are usually lower than 150 cm²/(V·s). To improve this situation, the researchers adopted the following strategies: - **Fe - doped Ga₂O₃ thin films**: Semi - insulating Fe - doped Ga₂O₃ thin films with step - like atomic steps were successfully prepared by the PLD method. Their carrier concentration is as low as 4.39×10⁷ cm⁻³, and the sheet resistance is as high as 2.26×10¹¹ Ω/□, with performance close to that of commercial Fe - doped single crystals. - **Sn - doped Ga₂O₃ epitaxial layers**: A Sn - doped epitaxial layer with step - like atomic steps was deposited on the Fe - doped layer, achieving a carrier concentration of 2.01×10²⁰ cm⁻³ and a Sn activation ratio of 41.1%, breaking through the low - activation bottleneck in metal - organic chemical vapor deposition (MOCVD) or molecular beam epitaxy (MBE). #### 2. Solve the surface roughness problem Traditional growth methods such as MOCVD, MBE, and HVPE often face the problem of rough surfaces when growing Ga₂O₃ thin films. To this end, the researchers proposed a two - step surface treatment method: - **First step: Pretreat the substrate**: Use Piranha solution to etch the commercial substrate and perform self - assembled annealing to repair surface defects and form ordered step - like atomic steps. - **Second step: Post - treat the epitaxial layer**: Perform similar etching and annealing treatments on the grown epitaxial layer to further improve the surface quality. This method reduces the roughness of the final Sn - doped epitaxial layer by two orders of magnitude, reaching an atomically flat level. ### Conclusion This research demonstrates a simple and effective method to achieve atomically flat Ga₂O₃ epitaxial layers and high doping activation ratios through PLD and a two - step surface treatment process. This provides an important material basis and technical support for the development of Ga₂O₃ materials in applications such as high - electron - mobility transistors (HEMT).