Epitaxial Growth and Stoichiometry Control of Ultrawide Bandgap ZnGa2O4 Films by Pulsed Laser Deposition

Liu Wang,Wenrui Zhang,Ningtao Liu,Tan Zhang,Zilong Wang,Simiao Wu,Zhaolin Zhan,Jichun Ye

DOI: https://doi.org/10.3390/coatings11070782

IF: 3.236

2021-06-30

Coatings

Abstract:ZnGa2O4 is a promising semiconductor for developing high-performance deep-ultraviolet photodetectors owing to a number of advantageous fundamental characteristics. However, Zn volatilization during the ZnGa2O4 growth is a widely recognized problem that seriously degrades the film quality and the device performance. In this study, we report the synthesis of epitaxial ZnGa2O4 thin films by pulsed laser deposition using a non-stoichiometric Zn1+xGa2O4 target. It is found that supplementing excessive Zn concentration from the target is highly effective to stabilize stochiometric ZnGa2O4 thin films during the PLD growth. The influence of various growth parameters on the phase formation, crystallinity and surface morphology is systematically investigated. The film growth behavior further impacts the resulting optical absorption and thermal conductivity. The optimized epitaxial ZnGa2O4 film exhibits a full width at half maximum value of 0.6 degree for a 120 nm thickness, a surface roughness of 0.223 nm, a band gap of 4.79 eV and a room-temperature thermal conductivity of 40.137 W/(m⋅K). This study provides insights into synthesizing epitaxial ZnGa2O4 films for high performance optoelectronic devices.

materials science, multidisciplinary,physics, applied, coatings & films

What problem does this paper attempt to address?

The problem that this paper attempts to solve is the non - stoichiometric defects and impurity phase formation problems caused by the volatilization of zinc (Zn) during the growth of ultra - wide - band - gap zinc gallium oxide (ZnGa\(_2\)O\(_4\)) thin films using pulsed laser deposition (PLD) technology. Specifically, ZnGa\(_2\)O\(_4\) (abbreviated as ZGO) is a semiconductor material with a wide band gap, which is suitable for the development of high - performance deep - ultraviolet photodetectors. However, during the growth of ZGO thin films, the high vapor pressure of Zn makes it easy to volatilize, which not only affects the quality of the thin films, but also may lead to the formation of non - stoichiometric defects and impurity phases (such as Ga\(_2\)O\(_3\)), thereby seriously affecting device performance.

To solve this problem, the researchers used a non - stoichiometric Zn\(_{1 + x}\)Ga\(_2\)O\(_4\) (x = 6.5) target material. By increasing the Zn concentration in the target material to compensate for the Zn loss during the growth process, the epitaxial growth of stoichiometric ZGO thin films was achieved. By systematically studying the effects of different growth parameters (such as growth temperature, oxygen pressure, and laser energy density) on the phase composition, crystallinity, surface morphology, optical properties, and thermal conductivity of the thin films, the researchers optimized the growth conditions of ZGO thin films and finally obtained high - quality ZGO thin films. These thin films have high crystallinity, a smooth surface, a direct band gap of approximately 4.79 eV, and a thermal conductivity of 40.137 W/(m·K) at room temperature. This research provides important insights for the synthesis of ZGO thin films in high - performance optoelectronic devices.