Abstract:Ternary complex oxides exhibit strong compositional dependence on their structure and functionalities. While the profound impact of the cation stoichiometry on the physical properties of ZnGa 2 O 4 is widely recognized, how it affects the ultraviolet photodetection behavior remains not clear. Here we apply a combinatorial pulsed laser deposition technique to establish graded composition in Zn x Ga 1-x O (0 ≤ x ≤ 1) across a 2-inch sapphire substrate. In combination with structural and optical characterizations, a systematic investigation of the compositional effect on the phase, crystallinity and bandgap for the Zn x Ga 1-x O system is performed, and their further impact on the photodetection performance is compared by fabricating multiple metal–semiconductor-metal (MSM) photodetectors based on the graded Zn x Ga 1-x O films. Decent photodetection behavior is seen for the photodetectors with x ≤ 0.33, above which the performance is largely limited by the conductive phase formation. An optimized compositional range of x = 0.18–0.27 is identified to deliver the best device performance, which includes a responsivity of 12.88 A/W and a photo-to-dark current ratio of 2.8 × 10 8 . This slight zinc deficiency is considered beneficial for the formation of moderate level of oxygen vacancies or antisite defects that boosts carrier transport. This study sheds light on the composition-dependent evolution of structure and properties in ternary ultrawide-bandgap semiconductors for high-performance ultraviolet photodetection.

Substrate temperature dependent crystal structure and deep-ultraviolet photodetection of ZnGa2O4 thin films ∗

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